Semiconductor device and method for manufacturing the semiconductor device

ABSTRACT

An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device which has acircuit including a thin film transistor (hereinafter referred to as aTFT) in which a channel formation region is formed using an oxidesemiconductor film and a manufacturing method thereof. For example, thepresent invention relates to an electronic appliance in which anelectro-optical device typified by a liquid crystal display panel or alight-emitting display device including an organic light-emittingelement is mounted as its component.

Note that the semiconductor device in this specification indicates allthe devices which can operate by using semiconductor characteristics,and an electro-optical device, a semiconductor circuit, and anelectronic appliance are all included in the semiconductor devices.

2. Description of the Related Art

In recent years, active matrix display devices (such as liquid crystaldisplay devices, light-emitting display devices, or electrophoreticdisplay devices) in which a switching element including a TFT isprovided in each of display pixels arranged in a matrix have beenactively developed. In the active matrix display devices, a switchingelement is provided in each of pixels (or each of dots), and thus, thereis such an advantage that the active matrix display devices can bedriven at lower voltage than passive matrix display devices in the casewhere the pixel density is increased.

In addition, a technique has attracted attention, where a thin filmtransistor (TFT) in which a channel formation region is formed using anoxide semiconductor film, or the like is manufactured and such a TFT orthe like is applied to electronic devices or optical devices. Forexample, a TFT in which zinc oxide (ZnO) is used as an oxidesemiconductor film or a TFT in which InGaO₃(ZnO)_(m) is used as an oxidesemiconductor film can be given. A technique in which a TFT includingsuch an oxide semiconductor film is formed over a light-transmittingsubstrate and used as a switching element or the like of an imagedisplay device, is disclosed in Patent Document 1 and Patent Document 2

REFERENCE Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.    2007-123861.-   [Patent Document 2] Japanese Published Patent Application No.    2007-96055

SUMMARY OF THE INVENTION

Thin film transistors in which an oxide semiconductor film is used for achannel formation region have many problems relating to reliability suchas instability of an interface of the oxide semiconductor film. However,interface characteristics of thin film transistors in which IGZO is usedhave not been discussed at all up to now. In addition, cause ofinstability relating to reliability has been unclear.

Thus, an object of an embodiment of the present invention is to providefavorable interface characteristics of a thin film transistor in whichan oxide semiconductor film including indium (In), gallium (Ga), andzinc (Zn) is used, without mixing of an impurity such as moisture.

In addition, in the case where a gate insulating layer in contact withthe oxide semiconductor film includes hydrogen, the hydrogen in the gateinsulating layer may possibly be diffused and react with oxygen in theoxide semiconductor film to be a H₂O component.

Further, in the case where the oxygen concentration of the gateinsulating layer is low, the oxygen concentration in the oxidesemiconductor film may possibly be reduced.

Furthermore, another object of an embodiment of the present invention isto provide a channel formation region including a large amount of oxygenin a thin film transistor in which an oxide semiconductor film includingindium (In), gallium (Ga), and zinc (Zn) is used.

In addition, high-speed operation, a comparatively simple manufacturingprocess, sufficient reliability are needed for a thin film transistor inwhich an oxide semiconductor film is used for a channel formationregion.

In formation of a thin film transistor, a low resistance metal materialis used for a source electrode and a drain electrode. In particular,when a display device with a large-area display is manufactured, aproblem of signal delay due to resistance of a wiring significantlyarises. Accordingly, it is preferable that a metal material with a lowelectrical resistance value be used as a material of a wiring and anelectrode. In a thin film transistor having a structure in which anoxide semiconductor film and source and drain electrodes formed using ametal material with a low electrical resistance value are in directcontact with each other, there is a concern that contact resistanceincreases. It can be considered that one cause of increase of contactresistance is that a Schottky junction is formed at a contact surfacebetween the source and drain electrodes and the oxide semiconductorfilm.

In addition, capacitance is formed in a portion where the source anddrain electrodes and the oxide semiconductor film have a direct contactwith each other, and there are risks that frequency characteristics(called “f characteristics”) decrease and high speed operation of thethin film transistor is hindered.

An object of an embodiment of the present invention is to provide a thinfilm transistor and a manufacturing method thereof, in which an oxidesemiconductor film including indium (In), gallium (Ga), and zinc (Zn) isused and the contact resistance of a source or drain electrode isreduced.

Another object is to improve operation characteristics and reliabilityof the thin film transistor in which an oxide semiconductor filmincluding In, Ga, and Zn is used.

Further, another object is to reduce variation in electricalcharacteristics of the thin film transistor in which an oxidesemiconductor film including In, Ga, and Zn is used. In particular, in aliquid crystal display device where variation between elements is large,there is a risk that display unevenness due to variation in the TFTcharacteristics is caused.

Further, in a display device including a light-emitting element, in thecase where there is large variation in on-current (I_(on)) of TFTs (TFTsprovided in a driver circuit or TFTs supplying current to light-emittingelements arranged in pixels) arranged so as to make constant currentflow in a pixel electrode, there is a risk that variation in luminanceis generated on a display screen.

An object of an embodiment of the present invention is to solve at leastone of the above problems.

A main point of an embodiment of the present invention is to performoxygen radical treatment on a surface of the gate insulating layer.Accordingly, there is a peak of the oxygen concentration at an interfacebetween the gate insulating layer and a semiconductor layer, and theoxygen concentration of the gate insulating layer has a concentrationgradient. The oxygen concentration is increased toward the interfacebetween the gate insulating layer and the semiconductor layer.

In addition, an embodiment of the present invention is an invertedstaggered (bottom gate) thin film transistor in which an oxygen-excessoxide semiconductor film is used as a semiconductor film and source anddrain regions are provided using an oxygen-deficient oxide semiconductorfilm between the semiconductor layer and source and drain electrodelayers.

As the semiconductor layer and the source and drain regions, oxidesemiconductor films containing In, Ga, and Zn can be used. Furthermore,tungsten, molybdenum, titanium, nickel, or aluminum may be substitutedfor any one of In, Ga, and Zn.

In this specification, a semiconductor layer formed using an oxidesemiconductor film including In, Ga, and Zn is also referred to as an“IGZO semiconductor layer.”

By oxygen radical treatment of the gate insulating layer, oxygenradicals can be implanted into the gate insulating layer so that thegate insulating layer in the vicinity of the interface with theoxygen-excess oxide semiconductor layer includes an excessive amount ofoxygen relative to the bulk GI.

By oxygen radical treatment, the gate insulating layer in the vicinityof the interface with the oxide semiconductor layer can be reformed intoa gate insulating layer having an oxygen-excess region.

The gate insulating layer having an oxygen-excess region and theoxygen-excess oxide semiconductor layer are compatible with each otherand can provide a favorable interface.

In addition, the gate insulating layer having an oxygen-excess regionand the oxygen-excess oxide semiconductor layer are preferably stackedby successive formation.

Oxygen radicals may be supplied from a plasma generating apparatus withuse of a gas including oxygen or from an ozone generating apparatus.According to an embodiment of the present invention, by irradiating athin film with oxygen radicals or oxygen supplied, the film surface canbe reformed.

In addition, the present invention is not limited to oxygen radicaltreatment, and argon and oxygen radical treatment may be performed. Theterm “argon and oxygen radical treatment” means modifying a thin filmsurface by introducing an argon gas and an oxygen gas and generatingplasma.

An Ar atom (Ar) in a reactive space in which an electric field isapplied and discharge plasma is generated is excited or ionized by anelectron (e) in discharge plasma to an argon radical (Ar*), an argon ion(Ar⁺), or an electron (e). An argon radical (Ar*) is in a metastablestate with high energy, and tends to return to a stable state byreacting with an atom of the same kind or a different kind in itsvicinity and exciting or ionizing the atom; thus, reaction occurs likean avalanche phenomenon. In the presence of oxygen in its vicinity atthat time, an oxygen atom (O) is excited or ionized to an oxygen radical(O*), an oxygen ion (O⁺), or oxygen (O). The oxygen radical (O*) reactswith a material at a surface of a thin film that is an object to betreated, whereby surface reformation is performed, and reacts with anorganic substance at the surface, whereby the organic substance isremoved; thus, plasma treatment is performed. Note that a feature of aradical of an inert gas is to maintain a metastable state for a longerperiod compared to a radical of a reactive gas; accordingly, an inertgas is generally used to generate plasma.

The gate insulating layer is most preferably an insulating layercontaining a large amount of oxygen which is formed by a sputteringmethod in which a silicon target is used and an Ar gas and an oxygen gasare introduced. On the other hand, in the case where the gate insulatinglayer is formed by a plasma CVD (PCVD) method using a TEOS gas or thelike, when hydrogen included in the gate insulating layer reacts withoxygen in the oxide semiconductor layer, H₂O or OH is easily produced,which may become an obstacle as a carrier killer and may cause adecrease in reliability. In other words, it is not preferable to use aninsulating film including hydrogen which is formed by a PCVD method asthe gate insulating layer because hydrogen in the gate insulating layermay react with oxygen in the oxygen-excess oxide semiconductor layer.Thus, the peak of the hydrogen concentration in the gate insulatinglayer, when measured by secondary ion mass spectrometry (SIMS), ispreferably 2×10¹⁹ cm⁻³ or less. In addition, FIG. 3 illustrates acomparative example in which a gate insulating layer having low oxygenconcentration is subjected to oxygen radical treatment; however, thiscase is not preferable because oxygen in the oxygen-excess oxidesemiconductor layer may be absorbed.

Therefore, the interface on the gate insulating layer side is subjectedto oxygen radical treatment and doped with oxygen such that distributionof oxygen concentration as illustrated in FIG. 1A is obtained. Afterthat, an IGZO film is formed, and then, heat treatment (200° C. to 600°C.) is performed. FIG. 1A is a schematic diagram of the oxygenconcentration in the vicinity of the interface between the gateinsulating layer and the semiconductor layer before heat treatment. FIG.1B is a schematic diagram of the oxygen concentration in the vicinity ofthe interface between the gate insulating layer and the semiconductorlayer after heat treatment.

Changing the state illustrated in FIG. 1A to the state of FIG. 1B byheat treatment is effective in preventing excess oxygen in the gateinsulating layer from being drifted to the IGZO film side and oxygen inthe IGZO film from being drifted to the GI side. With oxygen radicals ata surface of the gate insulating layer, the interface can be stabilized.It is found that a cause of instability in reliability is the interfacebetween the gate insulating layer and the IGZO film, and reliability isstabilized by reformation of not the IGZO film but the gate insulatinglayer and by heat treatment after that.

After a surface of the gate insulating layer is changed into SiN byplasma treatment, it may be subjected to oxygen radical treatment tosuppress diffusion of hydrogen from the gate insulating layer into theIGZO film. As plasma treatment to change a surface into SiN, a method inwhich a surface of the gate insulating layer is nitrided with nitrogenradicals (including NH radicals in some cases) by causing plasmaexcitation with microwaves, a method in which reverse sputtering isperformed in a nitrogen atmosphere, or the like may be used. FIGS. 2Aand 2B are schematic diagrams of oxygen concentration in the vicinity ofthe interface between the gate insulating layer, a surface of which hasbeen changed into SiN and then subjected to oxygen radial treatment, andthe semiconductor layer.

Note that FIGS. 1A and 1B, FIGS. 2A and 2B, and FIG. 3 are schematicdiagrams for simply illustrating a concept of an embodiment of thepresent invention, and it is needless to say that the present inventionis not particularly limited thereto.

Ohmic contact is needed between the source electrode layer and the IGZOsemiconductor layer, and moreover, its contact resistance is preferablyreduced as much as possible. Similarly, ohmic contact is needed betweenthe drain electrode layer and the IGZO semiconductor layer, and itscontact resistance is preferably reduced as much as possible.

Thus, a source region and a drain region having a higher carrierconcentration than the IGZO semiconductor layer are intentionallyprovided between the source and drain electrode layers and the IGZOsemiconductor layer, so that ohmic contact is made.

An oxygen-excess oxide semiconductor layer is used as a semiconductorlayer, and an oxygen-deficient oxide semiconductor layer is used as asource region or a drain region. The oxygen-deficient oxidesemiconductor which is the source or drain region includes crystalgrains.

When an oxygen-deficient oxide semiconductor layer including crystalgrains is positively provided as a source region or a drain region, ajunction between a source or a drain electrode layer that is a metallayer and an IGZO film is favorable and has a higher operation stabilityalso in terms of heat than Schottky junction. In addition, it isimportant to positively provide a source region or a drain regionincluding crystal grains in order to supply carriers to a channel (onthe source side), stably absorb carriers from a channel (on the drainside), or prevent resistance from being formed at an interface with thesource electrode layer (or the drain electrode layer). Reduction inresistance is also important to ensure favorable mobility even with highdrain voltage.

An IGZO film of 400 nm was formed over a glass substrate by a DCsputtering method and measured by XRD (X-ray analysis). The formationconditions were as follows: the pressure was 0.4 Pa; the power was 500W; the formation temperature was room temperature; the argon gas flowrate was 10 sccm; the oxygen flow rate was 5 sccm; and the target was atarget of In₂O₃:Ga₂O₃:ZnO=1:1:1. Note that the target having this ratiois intentionally used in order to obtain an amorphous IGZO film.

FIG. 37 is an XRD chart thereof. A chart immediately after the filmformation corresponds to that indicated in FIG. 37 as “as-depo.” In FIG.37, a chart after heat treatment in a nitrogen atmosphere at 350° C. for1 hour after the film formation, a chart after heat treatment in anitrogen atmosphere at 500° C. for 1 hour after the film formation, achart after heat treatment in a nitrogen atmosphere at 600° C. for 1hour after the film formation, and a chart after heat treatment in anitrogen atmosphere at 700° C. for 1 hour after the film formation arealso shown all together for convenience of comparison.

In a sample which has been subjected to the heat treatment at 700° C.,peaks indicating crystallinity are clearly observed in the range of 30°to 35° and in the range of 55° to 60°. In addition, a sample in which anIGZO film of 400 nm was formed and then subjected to heat treatment in anitrogen atmosphere at 700° C. for 1 hour was cut with a focused ionbeam (FIB) to expose an end face, and the end face was observed with ahigh-resolution transmission electron microscope (TEM: “H9000-NAR”manufactured by Hitachi, Ltd.) at an acceleration voltage of 300 kV. Theresults of observation at a magnification of 0.5 million times are shownin FIG. 48, where crystal grains can be seen. A photograph of across-section taken with a scanning transmission electron microscope(STEM: “HD-2700” manufactured by Hitachi, Ltd.) at an accelerationvoltage of 200 kV and at a magnification of 6 million times is shown inFIG. 49. In FIG. 49, a clear lattice image can be seen, whichcorresponds to the fact that the peaks indicating crystallinity are seenby the XRD measurement.

In addition, in order to examine the presence or absence of crystalgrains, the size of crystal grains, the distribution state of crystalgrains, an IGZO film of 50 nm was formed over a glass substrate by a DCsputtering method and cut with an FIB to expose an end face, and the endface was observed with the high-resolution transmission electronmicroscope (TEM: “H9000-NAR” manufactured by Hitachi, Ltd.) at anacceleration voltage of 300 kV.

Sample 1 in which film formation was performed by sputtering using atarget of In₂O₃:Ga₂O₃:ZnO=1:1:1 under oxygen-excess conditions where thepressure was 0.4 Pa, the power was 500 W, the formation temperature wasroom temperature, the argon gas flow rate was 5 sccm, and the oxygenflow rate was 45 sccm and Sample 2 in which film formation was performedby sputtering under oxygen-deficient conditions where only an argon gaswas introduced at a flow rate of 40 sccm without introducing an oxygengas and the other conditions were the same were prepared and eachsubjected to cross-section observation.

The results of observation of Sample 1 at a magnification of 0.5 milliontimes are shown in FIG. 38, and the results of observation of Sample 2at a magnification of 0.5 million times are shown in FIG. 39. In Sample1, no crystal grains can be seen in the IGZO film, whereas in Sample 2,it can be confirmed that crystal grains with a diameter of about 1 nm to10 nm, typically, about 2 nm to 4 nm, are scattered in the IGZO film.The crystal grains of Sample 2 have a smaller size than those in FIG. 48that is a cross-section observation photograph of the sample which hasbeen subjected to heat treatment at 700° C. The results indicate thatdespite the intentional use of a target of In₂O₃:Ga₂O₃:ZnO=1:1:1 inorder to obtain an amorphous IGZO film, an IGZO film including crystalgrains immediately after the film formation is obtained.

In addition, Sample 3 which was subjected to heat treatment in anitrogen atmosphere at 350° C. for 1 hour after film formation under theconditions for Sample 1, and Sample 4 which was subjected to heattreatment in a nitrogen atmosphere at 350° C. for 1 hour after filmformation under the conditions for Sample 2 were prepared and eachsubjected to cross-section observation.

The results of observation of Sample 3 at a magnification of 0.5 milliontimes are shown in FIG. 40, and the results of observation of Sample 4at a magnification of 0.5 million times are shown in FIG. 41. In Sample3, no crystal grains can be seen in the IGZO film, whereas in Sample 4,it can be confirmed that crystal grains with a diameter of about 1 nm to10 nm, typically, about 2 nm to 4 nm, are scattered in the IGZO film.

Samples 1 to 4 were measured by XRD, and the results obtained show thatno peaks indicating crystallinity can be clearly seen in any of thesamples as in the sample which is indicated as “as-depo” in FIG. 37 andthe sample which has been subjected to heat treatment in a nitrogenatmosphere at 350° C. for 1 hour.

Thus, no crystal grains can be seen in the TEM photograph of Sample 1 inwhich the sputtering film formation conditions are oxygen-excessconditions, whereas crystal grains can be seen in the TEM photograph ofSample 2 where the sputtering film formation conditions areoxygen-deficient conditions. A cause thereof is described below.

In Sample 2 obtained under oxygen-deficient conditions, plasma energy ofAr ions is imparted to grains in stoichiometric proportion which arenormally crystallized when a sputtering target is sputtered by Ar, andthe grains are crystallized or grown while flying (from the target to asubstrate). Thus, it can be observed that a crystal grain in a filmduring deposition has also an angled portion. In addition, it can alsobe observed that if heat treatment is performed at 350° C., crystalgrains tend to have a blurred grain boundary, that is, an indistinctgrain boundary, as shown in FIG. 41 compared to FIG. 39, by reactingwith oxygen in an amorphous component in the vicinity of the crystalgrains. It can be considered that the crystalline order of the crystalgrains is developed and expanded to the amorphous component in thevicinity.

Accordingly, under oxygen-deficient conditions, an IGZO film havinglower oxygen concentration is formed, and an n⁺ type region is formedwith a higher carrier concentration.

Through this formation process of crystal grains, it can be said thatthe density of crystal grains can be adjusted and the diameter size canbe adjusted within the range of 1 nm to 10 nm by appropriate adjustmentof the ratio of target constituents, the film formation pressure (0.1 Pato 2.0 Pa), the power (250 W to 3000 W, 8 inches ϕ), the temperature(room temperature to 100° C.), the reactive sputtering film formationconditions, or the like.

On the other hand, in Sample 1 obtained under oxygen-excess conditions,even if crystals are desired to be grown with plasma energy while flyingby sputtering of a sputtering target, excessive oxygen is present. Thus,each element strongly reacts with oxygen, and IGZO crystal growthmechanism cannot be applied; accordingly, all components are depositedin a glassy state (amorphous state) over a substrate.

It is needless to say that a process under intermediate conditionsbetween oxygen-deficient conditions and oxygen-excess conditions isadjusted by changing the degree of oxygen mixture during sputtering filmformation.

In addition, it can be considered that, in a sputtering method, strongenergy is imparted to a target by Ar ions; thus, strong strain energyexists in an IGZO film formed. In order to release the strain energy,heat treatment is performed at 200° C. to 600° C., typically, 300° C. to500° C. Through this heat treatment, rearrangement at the atomic leveloccurs. Because strain energy which inhibits carrier movement isreleased by the heat treatment, film formation and heat treatment(including optical annealing) are important. Note that heat treatment at200° C. to 600° C. does not lead to single crystal growth that is causedby great movement of atoms, unlike heat treatment at higher than 700° C.

At a heating temperature of 700° C. or higher, distinct crystal growthcan be observed, and a crystal peak can also be observed by XRD as shownin FIG. 37. On the other hand, under both oxygen-deficient conditionsand oxygen-excess conditions, no crystalline peaks can be observed byXRD measurement as shown in FIG. 37, although the reason is not clear,whether this is because crystal components are few or the crystallinitythereof is low, because the size of crystal grains is small, or becauseanother factor is involved.

Further enlarged views of the crystal grains observed in FIGS. 39 and 41are shown in FIGS. 42 and 43. FIG. 42 is a cross-sectional TEMphotograph (magnified 8 million times) of Sample 2 obtained underoxygen-deficient conditions. FIG. 43 is a cross-sectional TEM photograph(magnified 8 million times) of Sample 4 obtained under oxygen-deficientconditions and further subjected to heat treatment. In each of FIGS. 42and 43, a clear lattice image of crystal grains can be observed, and asingle crystal with a three-layer structure can be clearly observed.

Further enlarged views of FIGS. 38 and 40 are shown in FIGS. 44, 45, 46,and 47. FIG. 44 is a cross-sectional TEM photograph (magnified 2 milliontimes) of Sample 1 obtained under oxygen-excess conditions, and FIG. 46is a photograph magnified 8 million times. FIG. 45 is a cross-sectionalTEM photograph (magnified 2 million times) of Sample 3 obtained underoxygen-excess conditions and further subjected to heat treatment, andFIG. 47 is a photograph magnified 8 million times. In none of FIGS. 44,45, 46, and 47, crystal grains can be seen.

An embodiment of the present invention is a thin film transistor whichincludes a gate electrode layer, a gate insulating layer over the gateelectrode layer, an oxide semiconductor layer over the gate insulatinglayer, source and drain regions over the oxide semiconductor layer; andsource and drain electrode layers over the source and drain regions.There is a peak of an oxygen concentration at an interface between thegate insulating layer and the oxide semiconductor layer, and the oxygenconcentration of the gate insulating layer has a concentration gradient.The oxygen concentration is increased toward the interface between thegate insulating layer and the semiconductor layer.

An embodiment of the present invention is a thin film transistor whichincludes a gate electrode layer, a gate insulating layer over the gateelectrode layer, an oxide semiconductor layer over the gate insulatinglayer, source and drain regions over the oxide semiconductor layer; andsource and drain electrode layers over the source and drain regions.There is a peak of an oxygen concentration at an interface between thegate insulating layer and the oxide semiconductor layer, and the oxygenconcentrations of the gate insulating layer and the oxide semiconductorlayer each have a concentration gradient. The oxygen concentration isincreased toward the interface between the gate insulating layer and thesemiconductor layer.

In above structure, the oxygen concentration of the oxide semiconductorlayer is higher than the oxygen concentrations of the source and drainregions. When the oxide semiconductor layer is an oxygen-excess oxidesemiconductor layer and the source and drain region are oxygen-deficientoxide semiconductor layers, the carrier concentrations of the source anddrain regions can be higher than the carrier concentration of the oxidesemiconductor layer.

It is preferable to use a titanium film for the source electrode layerand the drain electrode layer. For example, a stacked layer of atitanium film, an aluminum film, and a titanium film has low resistanceand hillock is hardly generated in the aluminum film.

In a manufacturing method according to an embodiment of the presentinvention, a gate electrode layer is formed over a substrate; a gateinsulating layer is formed over the gate electrode layer; the gateinsulating layer is exposed to oxygen radical so as to be reformed; anoxide semiconductor layer is formed over the gate insulating layerreformed; source and drain regions are formed over the oxidesemiconductor layer; source and drain electrode layers are formed overthe source and drain regions; and the gate insulating layer and theoxide semiconductor layer are formed successively without being exposedto the air.

The gate insulating layer, the semiconductor layer, the source and drainregions, and the source and the drain electrode layers can be formedsuccessively without being exposed to the air. With successiveformation, defects due to mixing of impurities in the air to be dustinto interface can be suppressed.

The gate insulating layer, the semiconductor layer, the source and drainregions, and the source and drain electrode layers may be formed by asputtering method.

In this manner, by formation employing a sputtering method, productivityis high and reliability of the interface of a thin film is stabilized.In addition, when the gate insulating layer and the semiconductor layerare formed under an oxygen atmosphere so as to include a large amount ofoxygen, degradation of reliability due to deterioration, a shift ofcharacteristics of a thin film transistor toward the normally-on sideand the like can be suppressed.

In a manufacturing method of an embodiment of the present invention, agate electrode layer is formed over a substrate; a gate insulating layeris formed over the gate electrode layer; the gate insulating layer isexposed to oxygen radical so as to be reformed; an oxide semiconductorlayer is formed over the gate insulating layer reformed; source anddrain regions are formed over the oxide semiconductor layer; the oxidesemiconductor layer and the source and drain regions are heated at atemperature of 200° C. to 600° C., inclusive; source and drain electrodelayers are formed over the source and drain regions; and the gateinsulating layer and the oxide semiconductor layer are formedsuccessively without being exposed to the air.

According to an embodiment of the present invention, a thin filmtransistor with small photoelectric current, small parasiticcapacitance, and high on-off ratio can be obtained, so that a thin filmtransistor having excellent dynamic characteristics can be manufactured.Therefore, a semiconductor device which includes thin film transistorshaving excellent electrical characteristics and high reliability can beprovided.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are schematic diagrams of oxygen concentration in thevicinity of the interface between a gate insulating layer and asemiconductor layer before and after heat treatment;

FIGS. 2A and 2B are schematic diagrams of oxygen concentration in thevicinity of the interface between a gate insulating layer which isnitrided and a semiconductor layer;

FIG. 3 is a schematic diagram of oxygen concentration in the vicinity ofthe interface between a gate insulating layer and a semiconductor layer(comparative example);

FIGS. 4A and 4B each illustrate a semiconductor device of an embodimentof the present invention;

FIGS. 5A to 5D each illustrate a semiconductor device of an embodimentof the present invention;

FIGS. 6A and 6B illustrate a semiconductor device of an embodiment ofthe present invention;

FIGS. 7A to 7G illustrate a method for manufacturing a semiconductordevice of an embodiment of the present invention;

FIGS. 8A to 8D illustrate a method for manufacturing a semiconductordevice of an embodiment of the present invention;

FIGS. 9A and 9B illustrate a semiconductor device of an embodiment ofthe present invention;

FIGS. 10A and 10B illustrate a semiconductor device of an embodiment ofthe present invention;

FIGS. 11A and 11B illustrate a semiconductor device of the presentinvention;

FIG. 12 describes a semiconductor device of the present invention;

FIGS. 13A and 13B illustrate a semiconductor device of an embodiment ofthe present invention;

FIGS. 14A to 14D illustrate a method for manufacturing a semiconductordevice of an embodiment of the present invention;

FIG. 15 illustrates a semiconductor device of an embodiment of thepresent invention;

FIGS. 16A and 16B are block diagrams each illustrating a semiconductordevice;

FIG. 17 illustrates a configuration of a signal line driver circuit;

FIG. 18 is a timing chart illustrating operation of a signal line drivercircuit;

FIG. 19 is a timing chart illustrating operation of a signal line drivercircuit;

FIG. 20 illustrates a configuration of a shift register;

FIG. 21 illustrates a connection of a flip-flop illustrated in FIG. 20;

FIG. 22 is a top schematic view of a multi-chamber manufacturingapparatus;

FIGS. 23A and 23B illustrate a semiconductor device of an embodiment ofthe present invention;

FIGS. 24A to 24C illustrate a semiconductor device of an embodiment ofthe present invention;

FIG. 25 illustrates a semiconductor device of an embodiment of thepresent invention;

FIGS. 26A and 26B illustrate a semiconductor device of an embodiment ofthe present invention;

FIG. 27 illustrates a semiconductor device of an embodiment of thepresent invention;

FIGS. 28A to 28C each illustrate a semiconductor device of an embodimentof the present invention;

FIGS. 29A and 29B illustrate a semiconductor device of an embodiment ofthe present invention;

FIG. 30 illustrates a semiconductor device of an embodiment of thepresent invention;

FIGS. 31A and 31B each illustrate an example of a usage pattern ofelectronic paper;

FIG. 32 is an external view of an example of an e-book reader;

FIG. 33A is an external view of an example of a television device andFIG. 33B is an external view of an example of a digital photo frame;

FIGS. 34A and 34B are external views of examples of an amusementmachine;

FIG. 35 is an external view of an example of a mobile phone handset;

FIG. 36 illustrates a semiconductor device of an embodiment of thepresent invention;

FIG. 37 illustrates results of XRD measurement;

FIG. 38 is a cross-sectional TEM photograph (magnified 0.5 milliontimes) of Sample 1 obtained under oxygen-excess conditions;

FIG. 39 is a cross-sectional TEM photograph (magnified 0.5 milliontimes) of Sample 2 obtained under oxygen-deficient conditions;

FIG. 40 is a cross-sectional TEM photograph (magnified 0.5 milliontimes) of Sample 3 obtained under oxygen-excess conditions and furthersubjected to heat treatment;

FIG. 41 is a cross-sectional TEM photograph (magnified 0.5 milliontimes) of Sample 4 obtained under oxygen-deficient conditions andfurther subjected to heat treatment;

FIG. 42 is a cross-sectional TEM photograph (magnified 8 million times)of Sample 2 obtained under oxygen-deficient conditions;

FIG. 43 is a cross-sectional TEM photograph (magnified 8 million times)of Sample 4 obtained under oxygen-deficient conditions;

FIG. 44 is a cross-sectional TEM photograph (magnified 2 million times)of Sample 1 obtained under oxygen-excess conditions;

FIG. 45 is a cross-sectional TEM photograph (magnified 2 million times)of Sample 3 obtained under oxygen-excess conditions and furthersubjected to heat treatment;

FIG. 46 is a cross-sectional TEM photograph (magnified 8 million times)of Sample 1 obtained under oxygen-excess conditions;

FIG. 47 is a cross-sectional TEM photograph (magnified 8 million times)of Sample 3 obtained under oxygen-excess conditions and furthersubjected to heat treatment;

FIG. 48 is a cross-sectional TEM photograph (magnified 0.5 milliontimes) of a sample subjected to heat treatment at 700° C.; and

FIG. 49 is a STEM photograph (magnified 6 million times) of a samplesubjected to heat treatment at 700° C.

Embodiments will be described in detail with reference to theaccompanying drawings. However, the present invention is not limited tothe following description, and various changes and modifications for themodes and details thereof will be apparent to those skilled in the artunless such changes and modifications depart from the spirit and scopeof the invention. Therefore, the present invention should not beinterpreted as being limited to what is described in the embodimentsdescribed below. Identical portions or portions having similar functionsare marked by same reference numerals throughout the drawings so as toeliminate repeated explanation.

[Embodiment 1]

In this embodiment, a thin film transistor and a manufacturing methodthereof are described with reference to FIGS. 5A to 5D, FIGS. 6A and 6B,FIGS. 7A to 7G, and FIGS. 8A to 8D.

Thin film transistors 170 a, 170 b, and 170 c of this embodiment, eachof which has a bottom-gate structure, are described in FIGS. 5A to 5Dand FIGS. 6A and 6B. FIG. 5A is a plane view and FIG. 5B is across-sectional view taken along a line A1-A2 of FIG. 5A. FIG. 5C is aplane view and FIG. 5D is a cross-sectional view taken along a lineB1-B2 of FIG. 5C. FIG. 6A is a plane view and FIG. 6B is across-sectional view taken along a line C1-C2 of FIG. 6A.

In FIGS. 5A and 5B, a thin film transistor 170 a including a gateelectrode layer 101, a gate insulating layer 102, a semiconductor layer103, source and drain regions 104 a and 104 b, and source and drainelectrode layers 105 a and 105 b is provided over a substrate 100.

A surface of the gate insulating layer 102 is subjected to oxygenradical treatment. Accordingly, there is a peak of an oxygenconcentration at an interface between the gate insulating layer 102 andthe semiconductor layer 103, and the oxygen concentration of the gateinsulating layer 102 has a concentration gradient. The oxygenconcentration is increased toward the interface between the gateinsulating layer 102 and the semiconductor layer 103.

In addition, as the semiconductor layer 103, an oxygen-excess oxidesemiconductor film including In, Ga, and Zn is used, and the source anddrain regions 104 a and 104 b which are formed using an oxygen-deficientoxide semiconductor layer are formed purposely between the source anddrain electrode layers 105 a and 105 b and the semiconductor layer 103which is an IGZO semiconductor layer, whereby an ohmic contact isobtained. Further, tungsten, molybdenum, titanium, nickel, or aluminummay be substituted for any one of In, Ga, and Zn included in thesemiconductor layer 103 and the source and drain regions 104 a and 104b.

As the source and drain regions 104 a and 104 b, an oxygen-deficientoxide semiconductor film having crystal grains including In, Ga, and Znis used.

A carrier concentration of IGZO for a channel is set in a range where athin film transistor is not normally on. Therefore, the IGZO film havingthe carrier concentration in the range according to an embodiment of thepresent invention is used as the channel of the semiconductor layer,whereby a thin film transistor with high reliability can be formed.

The source and drain regions may have a stacked-layer structure. In thecase where the source and drain regions are formed by stacking, thecarrier concentration thereof may be set so as to be increased towardthe source and drain electrode layers side. When an impurity element isincluded in the source and drain regions, the source and drain regionshaving a high carrier concentration can be formed.

The thin film transistor 170 a in FIGS. 5A and 5B is an example of atransistor whose source and drain regions 104 a and 104 b and whosesource and drain electrode layers 105 a and 105 b are etched usingdifferent masks. The shape of the source and drain regions 104 a and 104b differs from that of the source and drain electrode layers 105 a and105 b.

The thin film transistor 170 b in FIGS. 5C and 5D is an example of atransistor whose source and drain regions 104 a and 104 b and whosesource and drain electrode layers 105 a and 105 b are etched using thesame mask. Therefore, the source and drain regions 104 a and 104 b andthe source and drain electrode layers 105 a and 105 b show the sameshape.

Each of the thin film transistor 170 a of FIGS. 5A and 5B and the thinfilm transistor 170 b of FIGS. 5C and 5D is an example in which endportions of the source and drain electrode layers 105 a and 105 b andend portions of the source and drain regions 104 a and 104 b are notaligned with each other over the semiconductor layer 103, and part ofthe source and drain regions 104 a and 104 b is exposed.

On the other hand, the thin film transistor 170 c of FIGS. 6A and 6B isan example of a transistor whose semiconductor layer 103 and whosesource and drain regions 104 a and 104 b are etched using the same mask;therefore, end portions the semiconductor layer 103 and the source anddrain regions 104 a and 104 b are aligned with each other. Note that thethin film transistor 170 c of FIGS. 6A and 6B is an example in which endportions of the source and drain electrode layers 105 a and 105 b andend portions of the source and drain regions 104 a and 104 b are alignedover the semiconductor layer 103.

In addition, a thin film transistor 171 d whose source and drainelectrode layers have a stacked-layer structure is illustrated in FIG.15. The thin film transistor 171 d includes a stacked layer of source ordrain electrode layers 105 a 1, 105 a 2 and 105 a 3, and a stacked layerof source or drain electrode layers 105 b 1, 105 b 2, and 105 b 3. Forexample, a titanium film can be used for the source and drain electrodelayers 105 a 1 and 105 b 1; an aluminum film can be used for the sourceand drain electrode layers 105 a 2 and 105 b 2; and a titanium film canbe used for the source and drain electrode layers 105 a 3 and 105 b 3.

In the case of the thin film transistor 171 d, the source and drainelectrode layers 105 a 1 and 105 b 1 are used as etching stoppers andthe source and drain electrode layers 105 a 2, 105 a 3, 105 b 2, and 105b 3 are formed by wet etching. With the use of the same mask as thatused in the aforementioned wet etching, the source and drain electrodelayers 105 a 1 and 105 b 1, the source and drain regions 104 a and 104b, and the semiconductor layer 103 are formed by dry etching.

Accordingly, end portions of the source or drain electrode layer 105 a 1and the source or drain electrode layer 105 b 1 are aligned with endportions of the source or drain region 104 a and the source or drainregion 104 b, respectively. End portions of the source or drainelectrode layers 105 a 2 and 105 a 3 and the source or drain electrodelayers 105 b 2 and 105 b 3 are positioned more inwardly than the endportions of the source and drain electrode layers 105 a 1 and 105 b 1,respectively.

As described above, in the case where etching selectivity of theconductive film used for the source and drain electrode layers withrespect to the source and drain regions and the semiconductor layer islow in an etching process, a conductive film functioning as an etchingstopper may be stacked, and etching may be performed plural times underdifferent etching conditions.

FIGS. 4A and 4B illustrate examples of thin film transistors 170 d and170 e, in each of which the semiconductor layer 103, the source anddrain regions 104 a and 104 b and the source and drain electrode layers105 a and 105 b are formed over the gate electrode layer 101 so that thegate electrode layer 101 is bigger than the semiconductor layer 103, thesource and drain regions 104 a and 104 b, and the source and drainelectrode layers 105 a and 105 b. In addition, insulating films 107 aand 107 b are formed as protective films over each of the thin filmtransistors 170 d and 170 e.

A method for manufacturing the thin film transistor 170 a of FIGS. 5Aand 5B is explained with the use of FIGS. 7A to 7G.

The gate electrode layer 101, the gate insulating layer 102, and asemiconductor film 111 are formed over the substrate 100 (see FIG. 7A).As the substrate 100, any of the following substrates can be used:non-alkaline glass substrates made of barium borosilicate glass,aluminoborosilicate glass, aluminosilicate glass, and the like by afusion method or a float method; ceramic substrates; plastic substrateshaving heat resistance enough to withstand a process temperature of thismanufacturing process; and the like. Alternatively, a metal substratesuch as a stainless steel alloy substrate, provided with an insulatingfilm over its surface, may also be used. As the substrate 50, asubstrate having a size of 320 mm×400 mm, 370 mm×470 mm, 550 mm×650 mm,600 mm×720 mm, 680 mm×880 mm, 730 mm×920 mm, 1000 mm×1200 mm, 1100mm×1250 mm, 1150 mm×1300 mm, 1500 mm×1800 mm, 1900 mm×2200 mm, 2160mm×2460 mm, 2400 mm×2800 mm, 2850 mm×3050 mm, or the like can be used.

Moreover, an insulating film may be formed as a base film over thesubstrate 100. The base film may be formed of a single layer or astacked layer using a silicon oxide film, a silicon nitride film, asilicon oxynitride film, and/or a silicon nitride oxide film employing asputtering method or the like.

The gate electrode layer 101 is formed using a metal material such astitanium, molybdenum, chromium, tantalum, tungsten, or aluminum, or analloy material thereof. The gate electrode layer 101 can be formed insuch a manner that a conductive film is formed over the substrate 100 bya sputtering method or a vacuum evaporation method; a mask is formedover the conductive film by a photolithography technique or an inkjetmethod; and the conductive film is etched using the mask. Alternatively,the gate electrode layer 101 can be formed by discharging a conductivenanopaste of silver, gold, copper, or the like by an inkjet method andbaking it. Note that, as barrier metal which increases adhesion of thegate electrode layer 101 and prevents diffusion to the substrate and thebase film, a nitride film of the above-mentioned metal material may beprovided between the substrate 100 and the gate electrode layer 101.Further, the gate electrode layer 101 may have either a single-layerstructure or a stacked-layer structure. For example, a stacked layer canbe used, in which a molybdenum film and an aluminum film, a molybdenumfilm and an alloy film of aluminum and neodymium, a titanium film and analuminum film, or a titanium film, an aluminum film, and a titanium filmare stacked from the substrate 100 side.

Note that, since a semiconductor film and a wiring are to be formed overthe gate electrode layer 101, it is desired that the gate electrodelayer 101 be processed to have tapered end portions in order to preventdisconnection.

The gate insulating layer 102 and the semiconductor film 111 can beformed successively without being exposed to the air. With thesuccessive formation, the respective interfaces of the stacked layerscan be formed without being contaminated by atmospheric component orcontamination impurities floating in the air.

In an active-matrix display device, electric characteristics of thinfilm transistors included in a circuit are important and performance ofthe display device is dependent on the electric characteristics of thinfilm transistors. Among the electric characteristics of thin filmtransistors, in particular, a threshold voltage (Vth) is important. Whenthe threshold voltage value is high or is on the minus side even whenthe field effect mobility is high, it is difficult to control thecircuit. In the case of a thin film transistor having a high thresholdvoltage whose absolute value is high, the thin film transistor at a lowdriving voltage cannot function as a switch and may possibly be a load.Further, when the threshold voltage value is on the minus side, currenttends to flow between the source and drain electrodes even if the gatevoltage is 0 V, that is, the transistor tends to be normally on.

In the case of an n-channel thin film transistor, it is preferable thata channel is formed and drain current begins to flow after the positivevoltage is applied as a gate voltage. A transistor in which a channel isnot formed unless the driving voltage is increased and a transistor inwhich a channel is formed and drain current flows even in the case ofthe negative voltage state are unsuitable for a thin film transistorused in a circuit.

Thus, it is preferable that a channel is formed with a positivethreshold voltage of a gate voltage which is as close to 0 V as possiblein a thin film transistor using an oxide semiconductor film includingIn, Ga, and Zn.

The threshold voltage value of the thin film transistor is considered tobe greatly affected by an interface of the oxide semiconductor layer,that is, an interface between the oxide semiconductor layer and the gateinsulating layer.

Thus, by formation of the interface in a clean condition, in addition toimproving electric characteristics of the thin film transistor, themanufacturing process can be prevented from being complicated, so that athin film transistor provided with improved mass productivity and highperformance is realized.

In particular, in the case where moisture from the air exists at aninterface between the oxide semiconductor layer and the gate insulatinglayer, problems such as degradation in electric characteristics of thethin film transistor, variation in threshold voltages, and the thin filmtransistor which tends to be normally on arise. By successive formationof the oxide semiconductor layer and the gate insulating layer, suchhydrogen compounds can be prevented from existing at the interface.

In addition a surface of the gate insulating layer 102 is subjected tooxygen radical treatment, whereby the surface of the gate insulatinglayer 102 is reformed to an oxygen-excess region.

As the oxygen radical treatment on the surface of the gate insulatinglayer 102, plasma treatment such as reverse sputtering may be performed.The reverse sputtering is a method by which voltage is applied to asubstrate side to generate plasma on the substrate side under an argonatmosphere, an oxygen atmosphere or a nitrogen atmosphere, withoutapplying voltage to a target side, so that a surface is reformed.Furthermore, the gate insulating layer is subjected to nitridingtreatment; plasma treatment such as reverse sputtering may be performedunder a nitrogen atmosphere.

Accordingly, the surface of the gate insulating layer 102 is reformed byoxygen radical and the gate insulating layer 102 and the semiconductorfilm 111 are successively formed without being exposed to the air by asputtering method under a reduced pressure, whereby a thin filmtransistor having high current drive capability in which a favorableinterface is included and a leakage current is reduced can be realized.

In addition, the gate insulating layer 102 and the semiconductor film111 that is an oxide semiconductor film including In, Ga, and Zn arepreferably formed under an oxygen atmosphere (or an atmospherecontaining oxygen at 90% or more and a rare gas (argon, helium, or thelike) at 10% or less).

By the successive film formation by a sputtering method, productivityand reliability of an interface of the thin films can be increased.Further, by forming the gate insulating layer and the semiconductorlayer under an oxygen atmosphere so that they include a large amount ofoxygen, reduction in reliability due to deterioration and shift of thethin film transistor characteristics toward the normally-on side can besuppressed.

The gate insulating layer 102 can be formed by a sputtering method usinga silicon oxide film, a silicon nitride film, a silicon oxynitride film,or a silicon nitride oxide film. The thin film transistor 170 cillustrated in FIGS. 6A and 6B is an example in which the gateinsulating layer 102 is formed by stacking.

The gate insulating layer 102 can be formed by stacking a siliconnitride film or a silicon nitride oxide film, and a silicon oxide filmor a silicon oxynitride film in this order. Note that the gateinsulating layer can be formed by stacking not two layers but threelayers of a silicon nitride film or a silicon nitride oxide film, asilicon oxide film or a silicon oxynitride film, and a silicon nitridefilm or a silicon nitride oxide film in this order from the substrateside. Alternatively, the gate insulating layer can be formed of a singlelayer of a silicon oxide film, a silicon nitride film, a siliconoxynitride film, or a silicon nitride oxide film.

Alternatively, the gate insulating layer 102 may be formed in such amanner that a silicon nitride film is formed over the gate electrodelayer 101 by a sputtering method and a silicon oxide film is stackedover the silicon nitride film by a sputtering method.

Here, a silicon oxynitride film means a film that includes more oxygenthan nitrogen. Further, a silicon nitride oxide film means a film thatincludes more nitrogen than oxygen.

Alternatively, the gate insulating layer 102 may be formed using onekind of oxide, nitride, oxynitride, and nitride oxide of aluminum,yttrium, or hafnium; or a compound including at least two or more kindsthereof.

A halogen element such as chlorine or fluorine may be included in thegate insulating layer 102. The concentration of the halogen element inthe gate insulating layer 102 may be from 1×10¹⁵ atoms/cm³ to 1×10²⁰atoms/cm³ inclusive at the concentration peak.

In this embodiment, in order to further reduce hydrogen in the gateinsulating layer 102, the gate insulating layer 102 is formed bysputtering using a target of single crystal silicon, an argon gas, andan oxygen gas. The hydrogen in the gate insulating layer 102 is diffusedand reacts with excessive oxygen in the semiconductor film 111 to becomea H₂O component, which is important to prevent the channel from becomingi-type. It is also important that moisture is prevented from adhering tothe interface between the gate insulating layer 102 and thesemiconductor film 111 by successive formation. Accordingly, it ispreferable that vacuum evacuation is performed on the inside of achamber with a cryopump or the like, and then sputtering is performed inultra-high-vacuum region, that is a so-called UHV region, at an ultimatepressure of 1×10⁻⁷ to 1×10⁻¹⁰ Torr (approximately 1×10⁻⁵ Pa to 1×10⁻⁸Pa, inclusive). Further, when the gate insulating layer 102 and thesemiconductor film 111 are stacked successively so that the interfacethereof is not exposed to the air, the surface of the gate insulatinglayer 102 is subjected to oxygen radical treatment and the surface ofthe gate insulating layer 102 becomes an oxygen-excess region, which iseffective in the case where a supply source of oxygen for reforming theinterface of the semiconductor film 111 is formed in a later step ofheat treatment for improving reliability.

In addition, when the oxygen-excess region is provided by performingoxygen radical treatment on the gate insulating layer 102, the oxygenconcentration of the surface of the semiconductor film 111 is high ascompared with that of the inside of the gate insulating layer 102.Moreover, the oxygen concentration at the interface between the gateinsulating layer 102 and the semiconductor film 111 is high in the casewhere oxygen radical treatment is performed, as compared with the casewhere oxygen radical treatment is not performed.

If the gate insulating layer 102 is subjected to oxygen radicaltreatment, the semiconductor film 111 is stacked, and then heattreatment is performed, the oxygen concentration of the semiconductorfilm 111 on the gate insulating layer 102 side becomes high.

The semiconductor film 111 is formed using an oxide semiconductor filmincluding In, Ga, and Zn. For example, the semiconductor film 111 may beformed using an oxide semiconductor film including In, Ga, and Zn, whosethickness is 50 nm. As a specific example, the semiconductor film 111can be formed using an oxide semiconductor target including In, Ga, andZn with a size of 8-inch in diameter in the following conditions: thedistance between the substrate and the target is 170 mm, the pressure is0.4 Pa, and the direct current (DC) power source is 0.5 kW under anargon atmosphere or an oxygen atmosphere. Further, a pulsed directcurrent (DC) power source is preferable because dust can be reduced anda thickness distribution is uniform.

The semiconductor film 111 can be formed under a rare gas atmosphere oran oxygen atmosphere using the oxide semiconductor target including In,Ga, and Zn. Here, in order that as a large amount of oxygen as possibleis included in the IGZO film as much as possible, sputtering isperformed by a pulsed DC sputtering method under an atmosphere includingonly oxygen or an atmosphere including oxygen at 90% or more and argonat 10% or less with the use of an oxide semiconductor including In, Ga,and Zn as a target, whereby the IGZO film including excessive oxygen isformed.

In this manner, by successive formation of the gate insulating layer 102including excessive oxygen and the semiconductor film 111 includingexcessive oxygen without being exposed to the air, a state at theinterface can be stabilized since both the films are films includingexcessive oxygen and thus reliability of the TFT can be improved. If thesubstrate is exposed to the air before deposition of the IGZO film,moisture or the like is attached and the interface state is adverselyaffected, which may cause phenomena such as variation in thresholdvoltage, deterioration in electric properties, and a normally-on TFT.Moisture is a hydrogen compound. When the films are successivelydeposited without being exposed to the air, the hydrogen compound can beprevented from existing at the interface. Therefore, by successivedeposition, variation in threshold voltage can be reduced, deteriorationin electric properties can be prevented, or shift of the TFTcharacteristics to the normally-on side can be reduced, or desirably,the shift of the TFT characteristics can be prevented.

Next, with the use of a mask 113, the semiconductor film 111 isprocessed by etching to form a semiconductor layer 112 (see FIG. 7B).The semiconductor layer 112 can be formed by etching the semiconductorfilm 111 with the use of the mask 113 which is formed by aphotolithography technique or a droplet discharge method.

When end portions of the semiconductor layer 112 are etched so as tohave a tapered shape, disconnection of a wiring due to a step shape canbe prevented.

Next, a semiconductor film 114 that is an oxygen-deficient oxidesemiconductor film including In, Ga, and Zn is formed over the gateinsulating layer 102 and the semiconductor layer 112 (see FIG. 7C). Amask 116 is formed over the semiconductor film 114. The mask 116 isformed by a photolithography technique or an ink-jet method. Thesemiconductor film 114 is processed by etching with the use of the mask116 to form a semiconductor film 115 (see FIG. 7D). The semiconductorfilm 115 may be formed so as to have a thickness of 2 nm to 100 nm(preferably, 20 nm to 50 nm). The semiconductor film 114 is formed undera rare gas (preferably, argon) atmosphere.

In addition, organic acid such as citric acid or oxalic acid can be usedas an etchant for etching of the IGZO semiconductor films such as thesemiconductor film 111 and the semiconductor film 115. For example, thesemiconductor film 111 with a thickness of 50 nm can be processed byetching with the use of ITO07N (manufactured by Kanto Chemical Co.,Inc.) for 150 seconds.

A conductive film 117 is formed over the semiconductor film 115 (seeFIG. 7E).

The conductive film 117 is preferably formed of a single layer or astacked layer using aluminum, copper, and/or an aluminum alloy to whichan element for improving heat resistance property or an element forpreventing a hillock such as silicon, titanium, neodymium, scandium, ormolybdenum, is added. Alternatively, the conductive film 117 may have astacked-layer structure where a film on the side in contact with thesemiconductor film having n-type conductivity is formed of titanium,tantalum, molybdenum, tungsten, or nitride of any of these elements andan aluminum film or an aluminum alloy film is formed thereover. Furtheralternatively, top and bottom surfaces of aluminum or an aluminum alloymay be each covered with titanium, tantalum, molybdenum, tungsten, ornitride thereof to form a stacked-layer structure. Here, as theconductive film 117, a stacked-layer conductive film of a titanium film,an aluminum film, and a titanium film is used.

A stacked-layer conductive film of a titanium film, an aluminum film,and a titanium film has low resistance and a hillock is hardly generatedin the aluminum film.

The conductive film 117 is formed by a sputtering method or a vacuumevaporation method. Alternatively, the conductive film 117 may be formedby discharging a conductive nanopaste of silver, gold, copper, or thelike by a screen printing method, an ink-jet method, or the like andbaking it.

Next, a mask 118 is formed over the conductive film 117. The conductivefilm 117 is etched using the mask 118 and separated to form the sourceand drain electrode layers 105 a and 105 b (see FIG. 7F). When theconductive film 117 is etched by wet etching, the conductive film 117 isetched isotropically as illustrated in FIG. 7F of this embodiment. Thus,end portions of the mask 118 and end portions of the source and drainelectrode layers 105 a and 105 b are not aligned, and the end portionsof the source and drain electrode layers 105 a and 105 b are positionedmore inwardly. Next, the semiconductor film 115 having n-typeconductivity is etched using the mask 118 to form the source and drainregions 104 a and 104 b (see FIG. 7G). Although it depends on etchingconditions, part of an exposed region of the semiconductor layer 112 isalso etched in the etching step of the semiconductor film 115 to formthe semiconductor layer 103. Thus, a channel region of the semiconductorlayer 103 between the source and drain regions 104 a and 104 b is a thinregion as illustrated in FIG. 7G. The thickness of the thin region ofthe semiconductor layer 103 that is an IGZO semiconductor layer is 2 nmto 200 nm inclusive, preferably 20 nm to 150 nm inclusive.

In addition, the semiconductor layer 103 may be subjected to oxygenradical treatment in a similar manner to the gate insulating layer 102.By performing oxygen radical treatment on the exposed part which is thechannel formation region of the semiconductor layer 103, the surface ofthe semiconductor layer 103 can be change to an oxygen-excess region.

In FIG. 4B, the thin film transistor 170 e is illustrated, in which achannel formation region of the semiconductor layer 103 is subjected tooxygen radical treatment. In the thin film transistor 170 e, an exposedpart of the semiconductor layer that is the channel formation region isreformed to an oxygen-excess region by oxygen radical treatment.

When the surface of the semiconductor layer is an oxygen-excess region,hydrogen can be prevented from mixing to the semiconductor layer. Inaddition, a back channel becomes an oxygen-deficient region, whichprevents conduction between the source and drain; therefore, off currentcan be reduced. In this manner, the back channel portion of thesemiconductor layer can also be an oxygen-excess region; therefore, in asimilar manner to oxygen radical treatment on the gate insulating layer,oxygen radical treatment on the back channel portion of thesemiconductor layer is effective.

The end portions of the source and drain electrode layers 105 a and 105b are not aligned with the end portions of the source and drain regions104 a and 104 b. The end portions of the source and drain regions 104 aand 104 b are formed on outer side of the end portions of the source anddrain electrode layers 105 a and 105 b.

After that, the mask 118 is removed. Through the above process, the thinfilm transistor 170 a can be formed.

Next, a manufacturing process of the thin film transistor 170 billustrated in FIGS. 5C and 5D is illustrated in FIGS. 8A to 8D.

FIG. 8A illustrates a state in which the mask 113 in the step of FIG. 7Bis removed. The semiconductor film 114 and a conductive film 121 arestacked in this order over the semiconductor layer 112 (see FIG. 8B). Inthis case, the semiconductor film 114 and the conductive film 121 can beformed successively by a sputtering method without being exposed to theair.

A mask 122 is formed over the semiconductor film 114 and the conductivefilm 121. Then, with the use of the mask 122, the conductive film 121 isprocessed by wet etching to form the source and drain electrode layers105 a and 105 b (see FIG. 8C).

Next, the semiconductor film 114 is processed by dry etching to form thesource and drain regions 104 a and 104 b (see FIG. 8D). In this step,part of the semiconductor layer 112 is also etched, thereby forming thesemiconductor layer 103. As illustrated in FIGS. 8A to 8D, when the samemask is used in formation of the source and drain regions 104 a and 104b and formation of the source and drain electrode layers 105 a and 105b, the number of masks can be reduced; therefore, simplification of theprocess and cost reduction can be achieved.

An insulating film may be formed as a protective film over each of thethin film transistors 170 a, 170 b, and 170 c in a similar manner to thethin film transistors 170 d and 170 e. The protective film can be formedin a similar manner to the gate insulating layer. Note that theprotective film is provided to prevent entry of a contaminant impuritysuch as an organic substance, a metal substance, or moisture floating inthe air and is preferably a dense film. For example, a stacked layer ofan oxide film (a silicon oxide film, a silicon oxynitride film, analuminum oxide film, or an aluminum oxynitride film) and a nitride film(a silicon nitride film, a silicon nitride oxide film, an aluminumnitride film, or an aluminum nitride oxide film) may be formed as theprotective film over the each of the thin film transistors 170 a, 170 b,170 c, 170 d, and 170 e. A silicon oxide film may be formed using asilicon target under a nitrogen and argon atmosphere by a DC sputteringmethod. An aluminum nitride film and an aluminum oxynitride film may beformed using a target of aluminum nitride by an RF sputtering method. Analuminum oxide film may be formed using a target of aluminum oxide by anRF sputtering method. In addition, before formation of the protectivefilm, vacuum baking may be performed.

In addition, after formation of the oxide semiconductor films such asthe semiconductor layer 103 and the source and drain regions 104 a and104 b, heating treatment is preferably performed thereon. Heatingtreatment may be performed in any step after the film formation; it canbe performed right after formation of the semiconductor layer 103 andthe source and drain regions 104 a and 104 b, after formation of theconductive film 117, after formation of the protective film, or thelike. In addition, heating treatment may be combined with another heattreatment. A heating temperature may be set to 200° C. to 600° C.inclusive, preferably 300° C. to 500° C. inclusive. In the case wherethe semiconductor layer 103 and the source and drain regions 104 a and104 b are successively formed as in FIGS. 6A and 6B, heating treatmentmay be performed after the semiconductor layer 103 and the source anddrain regions 104 a and 104 b are stacked. The heating treatment may beperformed plural times so that heat treatment of the semiconductor layer103 and heat treatment of the source and drain regions 104 a and 104 bare performed in different steps.

The end portions of the source and drain electrode layers 105 a and 105b are not aligned with the end portions of the source and drain regions104 a and 104 b, whereby the distance between the end portions of thesource and drain electrode layers 105 a and 105 b becomes longer.Therefore, generation of a leakage current and short circuit between thesource and drain electrode layers 105 a and 105 b can be prevented.Accordingly, a thin film transistor with high reliability and highwithstand voltage can be manufactured.

Alternatively, like the thin film transistor 170 c of FIGS. 6A and 6B, astructure in which the end portions of the source and drain regions 104a and 104 b and the end portions of the source and drain electrodelayers 105 a and 105 b are aligned with each other may be formed.Etching for forming the source and drain electrode layers 105 a and 105b and etching for forming the source and drain regions 104 a and 104 bare dry etching, whereby a structure of the thin film transistor 170 cof FIGS. 6A and 6B can be obtained. Alternatively, a structure of thethin film transistor 170 c of FIGS. 6A and 6B can be formed by formingthe source and drain regions 104 a and 104 b by etching thesemiconductor film 115 having n-type conductivity with use of the sourceand drain electrode layers 105 a and 105 b as a mask.

When a stacked-layer structure without source and drain regions (anoxygen-deficient oxide semiconductor layer including In, Ga, and Zn) isemployed, in which a gate electrode layer, a gate insulating layer, asemiconductor layer (an oxygen-excess oxide semiconductor layerincluding In, Ga, and Zn) and source and drain electrode layers arestacked, a distance between the gate electrode layer and the source anddrain electrode layers is small and therefore, parasitic capacitancegenerated therebetween is increased. In addition, this increase in theparasitic capacitance becomes more significant when the semiconductorlayer is thin. In this embodiment, a thin film transistor having astacked-layer structure with source and drain regions, in which a gateelectrode layer, a gate insulating layer, a semiconductor layer, sourceand drain regions, and source and drain electrode layers are stacked, isused; therefore, parasitic capacitance can be suppressed even when thesemiconductor layer is a thin film.

According to this embodiment, a thin film transistor with smallphotoelectric current, small parasitic capacitance, and a high on-offratio can be obtained, so that a thin film transistor having excellentdynamic characteristics can be manufactured. Therefore, a semiconductordevice including a thin film transistor with favorable electricproperties and high reliability can be provided.

[Embodiment 2]

In this embodiment, an example of a thin film transistor having amulti-gate structure will be described. Accordingly, except the gatestructure, the thin film transistor can be formed in a manner similar toEmbodiment 1, and repetitive description of the same portions as orportions having functions similar to those in Embodiment 1 andmanufacturing steps will be omitted.

In this embodiment, a thin film transistor included in a semiconductordevice will be described with reference to FIGS. 9A and 9B, FIGS. 10Aand 10B, and FIGS. 11A and 11B.

FIG. 9A is a plan view of a thin film transistor 171 a and FIG. 9Bcorresponds to a cross-sectional view of the thin film transistor 171 ataken along a line E1-E2 of FIG. 9A.

As illustrated in FIGS. 9A and 9B, the thin film transistor 171 a havinga multi-gate structure, which includes gate electrode layers 151 a and151 b, a gate insulating layer 152, semiconductor layers 153 a and 153b, source and drain regions 154 a, 154 b, and 154 c, and source anddrain electrode layers 155 a and 155 b, is provided over a substrate150.

The semiconductor layers 153 a and 153 b are oxygen-excess oxidesemiconductor layers including In, Ga, and Zn, and the source and drainregions 154 a, 154 b, and 154 c are oxygen-deficient oxide semiconductorlayers including In, Ga, and Zn. The source and drain regions 154 a, 154b, and 154 c have a higher carrier concentration than the semiconductorlayers 153 a and 153 b.

The gate insulating layer 152 having an oxygen-excess region and thesemiconductor layers 153 a and 153 b which are oxygen-excess oxidesemiconductor layers are compatible with each other and can providefavorable interface characteristics.

After the gate insulating layer 152 is formed, a surface of the gateinsulating layer 152 is subjected to oxygen radical treatment to form anoxygen-excess region. The gate insulating layer 152 and thesemiconductor layers 153 a and 153 b are formed successively.

The source and drain regions 154 a, 154 b, and 154 c which areoxygen-deficient oxide semiconductor layers include crystal grains witha size of 1 nm to 10 nm and have a higher carrier concentration than thesemiconductor layers 153 a and 153 b.

The semiconductor layers 153 a and 153 b are electrically connected toeach other with the source or drain region 154 c interposedtherebetween. In addition, the semiconductor layer 153 a is electricallyconnected to the source or drain electrode layer 155 a with the sourceor drain region 154 a interposed therebetween and the semiconductorlayer 153 b is electrically connected to the source or drain electrodelayer 155 b with the source or drain region 154 b interposedtherebetween.

FIGS. 10A and 10B illustrate a thin film transistor 171 b having adifferent multi-gate structure. FIG. 10A is a plan view of the thin filmtransistor 171 b and FIG. 10B corresponds to a cross-sectional view ofthe thin film transistor 171 b taken along a line F1-F2 of FIG. 10A. Inthe thin film transistor 171 b of FIGS. 10A and 10B, a wiring layer 156is formed over the source or drain region 154 c in the same step as thesource and drain electrode layers 155 a and 155 b, and the semiconductorlayers 153 a and 153 b are electrically connected to each other with thesource or drain region 154 c and the wiring layer 156 interposedtherebetween.

FIGS. 11A and 11B illustrate a thin film transistor 171 c having adifferent multi-gate structure. FIG. 11A is a plan view of the thin filmtransistor 171 c and FIG. 11B corresponds to a cross-sectional view ofthe thin film transistor 171 c taken along a line G1-G2 of FIG. 11A. Inthe thin film transistor 171 c of FIGS. 11A and 11B, a semiconductorlayer 153 which is a continuous layer is formed instead of thesemiconductor layers 153 a and 153 b. The semiconductor layer 153 isprovided so as to extend over the gate electrode layers 151 a and 151 bwith the gate insulating layer 152 interposed therebetween.

As described above, in a thin film transistor having a multi-gatestructure, a semiconductor layer may be provided as a continuous layerover each gate electrode layer or a plurality of semiconductor layerswhich are electrically connected to each other with a source or drainregion, a wiring layer, or the like interposed therebetween may beprovided.

A thin film transistor having a multi-gate structure has smalloff-current, and a semiconductor device including such a thin filmtransistor can have excellent electrical characteristics and highreliability.

In this embodiment, a double-gate structure in which two gate electrodelayers are provided is described as an example of a multi-gatestructure; however, the present invention can also be applied to atriple-gate structure or the like in which a larger number of gateelectrode layers are provided.

The thin film transistor described in this embodiment has a structure inwhich the gate electrode layer, the gate insulating layer, thesemiconductor layer (an oxygen-excess oxide semiconductor layer), thesource and drain regions (oxygen-deficient oxide semiconductor layers),and the source and drain electrode layers are stacked. By usingoxygen-deficient oxide semiconductor layers including crystal grains andhaving a high carrier concentration as the source and drain regions, theparasitic capacitance can be reduced while the thickness of thesemiconductor layer is kept small. Note that the parasitic capacitanceis sufficiently suppressed even when the source and drain regions have asmall thickness, because the thickness of the source and drain regionsis sufficient with respect to that of the gate insulating layer.

According to this embodiment, a thin film transistor with smallphotoelectric current, small parasitic capacitance, and high on-offratio can be obtained, so that a thin film transistor having excellentdynamic characteristics can be manufactured. Therefore, a semiconductordevice which includes thin film transistors having excellent electricalcharacteristics and high reliability can be provided.

This embodiment can be combined with any of the other embodiments asappropriate.

[Embodiment 3]

This embodiment describes an example of a thin film transistor that isan embodiment of the present invention, in which source and drainregions are formed by stacking. Therefore, the other parts can be madein a similar manner to Embodiment 1 or 2, and the same parts or partshaving similar functions, or steps for making such parts are notrepeatedly described.

In this embodiment, a thin film transistor 173 used for a semiconductordevice is explained using FIG. 12.

As illustrated in FIG. 12, the thin film transistor 173 is provided overa substrate 100, in which a gate electrode layer 101, a semiconductorlayer 103, source and drain regions 106 a and 106 b which are secondsource and drain regions, source and drain regions 104 a and 104 b whichare first source and drain regions, and source and drain electrodelayers 105 a and 105 b are formed.

In the thin film transistor 173 of this embodiment, the source or drainregion 106 a and the source or drain region 106 b are provided as thesecond source and drain regions between the source or drain region 104 aand the source or drain electrode layer 105 a and between the source ordrain region 104 b and the source or drain electrode layer 105 b,respectively.

The semiconductor layer 103 is an oxygen-excess oxide semiconductorlayer including In, Ga, and Zn; the source and drain regions 104 a, 104b, 106 a, and 106 b are oxygen-deficient oxide semiconductor layersincluding In, Ga, and Zn.

The source and drain regions 106 a and 106 b between the source anddrain regions 104 a and 104 b, and the source and drain electrode layers105 a and 105 b include an impurity element.

As the impurity element included in the source and drain regions 106 aand 106 b, for example, indium, gallium, zinc, magnesium, aluminum,titanium, iron, tin, calcium, scandium, yttrium, zirconium, hafnium,boron, thallium, germanium, lead, or the like can be used. Such animpurity element (for example, magnesium, aluminum, titanium, or thelike) is included in the source and drain regions, which has an effectof blocking oxygen and the like. The oxygen concentration of thesemiconductor layer can be kept in an optimum range by heating treatmentor the like after formation of the semiconductor layer. In thisembodiment, oxygen-deficient oxide semiconductor layers including In,Ga, and Zn are used for the source and drain regions 106 a and 106 b.

When oxygen-deficient oxide semiconductor layers including titanium areprovided as the source and drain regions 106 a and 106 b, aluminum filmsare formed as the source and drain electrode layers over the source anddrain regions 106 a and 106 b directly, and then titanium films can beformed over the aluminum films.

The thin film transistor including a plurality of the source and drainregions of an embodiment of the present invention can operate at highspeed. A semiconductor device including such a thin film transistor canhave excellent electric characteristics and high reliability.

This embodiment can be combined with any of other embodiments asappropriate.

[Embodiment 4]

In this embodiment, an example will be described below, in which part ofthe shape and manufacturing method of a thin film transistor aredifferent from those in Embodiment 1. Accordingly, except the part ofthe shape and manufacturing method, the thin film transistor can beformed in a manner similar to Embodiment 1, and repetitive descriptionof the same portions as or portions having functions similar to those inEmbodiment 1 and manufacturing steps will be omitted.

In this embodiment, a thin film transistor 174 included in a displaydevice and a manufacturing process thereof will be described withreference to FIGS. 13A and 13B and FIGS. 14A to 14D. FIG. 13A is a planview of the thin film transistor 174, and FIG. 13B and FIGS. 14A to 14Dcorrespond to cross-sectional views of the thin film transistor andmanufacturing process thereof taken along a line D1-D2 of FIG. 13A.

As illustrated in FIGS. 13A and 13B, the thin film transistor 174including a gate electrode layer 101, a semiconductor layer 103, sourceand drain regions 104 a and 104 b, and source and drain electrode layers105 a and 105 b is provided over a substrate 100.

The semiconductor layer 103 is an oxygen-excess oxide semiconductorlayer containing In, Ga, and Zn, and the source and drain regions 104 aand 104 b are oxygen-deficient oxide semiconductor layers containing In,Ga, and Zn. The source and drain regions 104 a and 104 b have a highercarrier concentration than the semiconductor layer 103.

After the gate insulating layer 102 is formed, a surface of the gateinsulating layer 102 is subjected to oxygen radical treatment to form anoxygen-excess region. The gate insulating layer 102 and thesemiconductor layer 103 are formed successively.

The gate insulating layer 102 having an oxygen-excess region and thesemiconductor layer 103 which is an oxygen-excess oxide semiconductorlayer are compatible with each other and can provide favorable interfacecharacteristics.

The source and drain regions 104 a and 104 b which are oxygen-deficientoxide semiconductor layers include crystal grains with a size of 1 nm to10 nm and have a higher carrier concentration than the semiconductorlayer 103.

The semiconductor layer 103 is electrically connected to the source ordrain electrode layer 105 a with the source or drain region 104 ainterposed therebetween and electrically connected to the source ordrain electrode layer 105 b with the source or drain region 104 binterposed therebetween.

A manufacturing process of the thin film transistor 174 is describedwith reference to FIGS. 14A to 14D. The gate electrode layer 101 isformed over the substrate 100. Next, the gate insulating layer 102 isformed over the gate electrode layer 101 and a surface of the gateinsulating layer 102 is then subjected to oxygen radical treatment.After that, a semiconductor film 131 which is an oxygen-excess oxidesemiconductor film including In, Ga, and Zn, a semiconductor film 132which is an oxygen-deficient oxide semiconductor film including In, Ga,and Zn, and a conductive film 133 are sequentially formed (see FIG.14A).

The gate insulating layer 102, the semiconductor film 131 which is anoxygen-excess oxide semiconductor film including In, Ga, and Zn, thesemiconductor film 132 which is an oxygen-deficient oxide semiconductorfilm including In, Ga, and Zn, and the conductive film 133 can be formedsuccessively without being exposed to the air. By successive formationwithout exposure to air, each interface between the staked layers can beformed without being contaminated by atmospheric constituents orcontaminating impurities floating in the atmosphere; thus, variation ofthin film transistor characteristics can be reduced.

In this embodiment, an example in which light exposure is performedusing a multi-tone mask to form a mask 135 is described. In order toform the mask 135, a resist is formed. As the resist, a positive-typeresist or a negative-type resist can be used. In this example, apositive-type resist is used.

Next, with use of a multi-tone mask as a photomask, the resist isirradiated with light and exposed to light.

A multi-tone mask can achieve three levels of light exposure to obtainan exposed portion, a half-exposed portion, and an unexposed portion;one-time exposure and development process enables a resist mask withregions of plural thicknesses (typically, two kinds of thicknesses) tobe formed. Thus, the use of a multi-tone mask allows the number ofphotomasks to be reduced.

Typical examples of multi-tone masks include a gray-tone mask and ahalf-tone mask.

A gray-tone mask includes a light-transmitting substrate and alight-blocking portion and a diffraction grating which are provided onthe light-transmitting substrate. The light transmittance of thelight-blocking portion is 0%. On the other hand, the diffraction gratinghas a light-transmitting portion in a slit form, a dot form, a meshform, or the like with intervals which are less than or equal to theresolution limit of light used for the light exposure; thus, lighttransmittance can be controlled. Note that either periodic ornon-periodic slits, dots, or mesh can be used for the diffractiongrating.

As the light-transmitting substrate, a light-transmitting substrate suchas a quartz substrate can be used. The light-blocking portion and thediffraction grating can be formed using a light-blocking material whichabsorbs light, such as chromium or chromium oxide.

When the gray-tone mask is irradiated with light for exposure, the lighttransmittance of the light-blocking portion is 0% and that of a regionwhere neither the light-blocking portion nor the diffraction grating isprovided is 100%. The light transmittance of the diffraction grating canbe controlled in the range of from 10% to 70%. The light transmittanceof the diffraction grating can be controlled by controlling the intervaland pitch of the slits, dots, or mesh of the diffraction grating.

A half-tone mask includes a light-transmitting substrate and asemi-light-transmitting portion and a light-blocking portion which areprovided on the light-transmitting substrate. Thesemi-light-transmitting portion can be formed using MoSiN, MoSi, MoSiO,MoSiON, CrSi, or the like. The light-blocking portion can be formedusing a light-blocking material which absorbs light, such as chromium orchromium oxide.

When the half-tone mask is irradiated with light for exposure, the lighttransmittance of the light-blocking portion is 0% and the lighttransmittance of a region where neither the light-blocking portion northe semi-light-transmitting portion is provided is 100%. The lighttransmittance of the semi-light-transmitting portion can be controlledin the range of from 10% to 70%. The light transmittance of thesemi-light-transmitting portion can be controlled with the material ofthe semi-light-transmitting portion.

After light exposure with use of the multi-tone mask, development isperformed. Accordingly, the mask 135 having regions with different filmthicknesses can be formed as illustrated in FIG. 14B.

Next, with the mask 135, the semiconductor film 131, the semiconductorfilm 132 having n-type conductivity, and the conductive film 133 areisolated by etching. As a result, a semiconductor film 136, asemiconductor film 137 having n-type conductivity, and a conductive film138 can be formed (see FIG. 14B).

Next, the mask 135 is subjected to ashing. As a result, the area andthickness of the mask are reduced. At this time, a region of the maskwith a smaller thickness (a region overlapping part of the gateelectrode layer 101) is removed, thereby forming masks 139 which areseparated from each other (see FIG. 14C).

With use of the masks 139, the conductive film 138 is etched, wherebythe source and drain electrode layers 105 a and 105 b are formed. By wetetching of the conductive film 138 as in this embodiment, the conductivefilm 138 is isotropically etched. Thus, end portions of the source anddrain electrode layers 105 a and 105 b are not aligned with and arepositioned more inwardly than end portions of the masks 139.Accordingly, end portions of the semiconductor film 137 having n-typeconductivity and the semiconductor film 136 are positioned outside theend portions of the source and drain electrode layers 105 a and 105 b.Next, with use of the masks 139, the semiconductor film 137 havingn-type conductivity and the semiconductor film 136 are etched, wherebythe source and drain regions 104 a and 104 b and the semiconductor layer103 are formed (see FIG. 14D). Note that the semiconductor layer 103 isetched only partly and has a groove.

The source and drain regions 104 a and 104 b and the groove of thesemiconductor layer 103 can be formed in the same step; thus, thesemiconductor layer 103 has a similar shape in which end portionsthereof are exposed by being partly etched. Then, the masks 139 areremoved.

Through the above steps, the thin film transistor 174 illustrated inFIGS. 13A and 13B can be manufactured.

The use of a resist mask having regions of plural thicknesses(typically, two kinds of thicknesses) formed with use of a multi-tonemask as in this embodiment enables the number of resist masks to bereduced; therefore, the process can be simplified and cost can bereduced.

This embodiment can be combined with any of the other embodiments asappropriate.

[Embodiment 5]

This embodiment describes an example in which at least part of a drivercircuit and a thin film transistor to be disposed in a pixel portion areformed over one substrate in a display device that is one example of asemiconductor device of the present invention.

The thin film transistor to be disposed in the pixel portion is formedaccording to any one of Embodiments 1 to 4. Further, the thin filmtransistor described in any one of Embodiments 1 to 4 is an n-channelTFT. Thus, a part of a driver circuit that can be formed using n-channelTFTs among driver circuits is formed over the same substrate as that forthe thin film transistor of the pixel portion.

FIG. 16A illustrates an example of a block diagram of an active matrixliquid crystal display device. The display device illustrated in FIG.16A includes, over a substrate 5300, a pixel portion 5301 including aplurality of pixels each provided with a display element; a scanningline driver circuit 5302 that selects a pixel; and a signal line drivercircuit 5303 that controls a video signal input to the selected pixel.

The pixel portion 5301 is connected to the signal line driver circuit5303 by a plurality of signal lines S1 to Sm (not illustrated) thatextend in a column direction from the signal line driver circuit 5303,and to the scanning line driver circuit 5302 by a plurality of scanninglines G1 to Gn (not illustrated) that extend in a row direction from thescanning line driver circuit 5302. The pixel portion 5301 includes aplurality of pixels (not illustrated) arranged in matrix so as tocorrespond to the signal lines S1 to Sm and the scanning lines G1 to Gn.Each pixel is connected to a signal line Sj (one of the signal lines S1to Sm) and a scanning line Gj (one of the scanning lines G1 to Gn).

In addition, the thin film transistor described in any one ofEmbodiments 1 to 4 is an n-channel TFT, and a signal line driver circuitincluding the n-channel TFT is described with reference to FIG. 17.

The signal line driver circuit illustrated in FIG. 17 includes a driverIC 5601, switch groups 5602_1 to 5602_M, a first wiring 5611, a secondwiring 5612, a third wiring 5613, and wirings 5621_1 to 5621_M. Each ofthe switch groups 5602_1 to 5602_M includes a first thin film transistor5603 a, a second thin film transistor 5603 b, and a third thin filmtransistor 5603 c.

The driver IC 5601 is connected to the first wiring 5611, the secondwiring 5612, the third wiring 5613, and the wirings 5621_1 to 5621_M.Each of the switch groups 5602_1 to 5602_M is connected to the firstwiring 5611, the second wiring 5612, and the third wiring 5613, and theswitch groups 5602_1 to 5602_M are connected to the wirings 5621_1 to5621_M, respectively. Each of the wirings 5621_1 to 5621_M is connectedto three signal lines via the first thin film transistor 5603 a, thesecond thin film transistor 5603 b, and the third thin film transistor5603 c. For example, a wiring 5621_J of the J-th column (one of thewirings 5621_1 to 5621_M) is connected to a signal line Sj−1, a signalline Sj, and a signal line Sj+1 via the first thin film transistor 5603a, the second thin film transistor 5603 b, and the third thin filmtransistor 5603 c included in the switch group 5602_J.

A signal is input to each of the first wiring 5611, the second wiring5612, and the third wiring 5613.

Note that the driver IC 5601 is preferably formed over a single crystalsubstrate. The switch groups 5602_1 to 5602_M are preferably formed overthe same substrate as that for the pixel portion. Therefore, the driverIC 5601 and the switch groups 5602_1 to 5602_M are preferably connectedthrough an FPC or the like.

Next, operation of the signal line driver circuit illustrated in FIG. 17is described with reference to a timing chart in FIG. 18. The timingchart in FIG. 18 shows a case where a scanning line Gi of the i-th rowis selected. A selection period of the scanning line Gi of the i-th rowis divided into a first sub-selection period T1, a second sub-selectionperiod T2, and a third sub-selection period T3. In addition, the signalline driver circuit in FIG. 17 operates as shown in FIG. 18 even when ascanning line of another row is selected.

Note that the timing chart in FIG. 18 shows a case where the wiring5621_J in the J-th column is connected to the signal line Sj−1, thesignal line Sj, and the signal line Sj+1 via the first thin filmtransistor 5603 a, the second thin film transistor 5603 b, and the thirdthin film transistor 5603 c.

The timing chart in FIG. 18 shows timing at which the scanning line Giof the i-th row is selected, timing 5703 a of on/off of the first thinfilm transistor 5603 a, timing 5703 b of on/off of the second thin filmtransistor 5603 b, timing 5703 c of on/off of the third thin filmtransistor 5603 c, and a signal 5721_J input to the wiring 5621_J of theJ-th column.

In the first sub-selection period T1, the second sub-selection periodT2, and the third sub-selection period T3, different video signals areinput to the wirings 5621_1 to 5621_M. For example, a video signal inputto the wiring 5621_J in the first sub-selection period T1 is input tothe signal line Sj−1, a video signal input to the wiring 5621_J in thesecond sub-selection period T2 is input to the signal line Sj, and avideo signal input to the wiring 5621_J in the third sub-selectionperiod T3 is input to the signal line Sj+1. In addition, in the firstsub-selection period T1, the second sub-selection period T2, and thethird sub-selection period T3, the video signals input to the wiring5621_J are denoted by Data_j−1, Data_j, and Data_j+1, respectively.

As shown in FIG. 18, in the first sub-selection period T1, the firstthin film transistor 5603 a is turned on, and the second thin filmtransistor 5603 b and the third thin film transistor 5603 c are turnedoff. At this time, Data_j−1 input to the wiring 5621_J is input to thesignal line Sj−1 via the first thin film transistor 5603 a. In thesecond sub-selection period T2, the second thin film transistor 5603 bis turned on, and the first thin film transistor 5603 a and the thirdthin film transistor 5603 c are turned off. At this time, Data_j inputto the wiring 5621_J is input to the signal line Sj via the second thinfilm transistor 5603 b. In the third sub-selection period T3, the thirdthin film transistor 5603 c is turned on, and the first thin filmtransistor 5603 a and the second thin film transistor 5603 b are turnedoff. At this time, Data_j+1 input to the wiring 5621_J is input to thesignal line Sj+1 via the third thin film transistor 5603 c.

As described above, in the signal line driver circuit in FIG. 17, bydividing one gate selection period into three, video signals can beinput to three signal lines from one wiring 5621 in one gate selectionperiod. Therefore, in the signal line driver circuit in FIG. 17, thenumber of connections of the substrate provided with the driver IC 5601and the substrate provided with the pixel portion can be approximately ⅓of the number of signal lines. The number of connections is reduced toapproximately ⅓ of the number of the signal lines, so that reliability,yield, etc., of the signal line driver circuit in FIG. 17 can beimproved.

Note that there are no particular limitations on the arrangement, thenumber, a driving method, and the like of the thin film transistors, aslong as one gate selection period is divided into a plurality ofsub-selection periods and a video signal is input to a plurality ofsignal lines from one wiring in each of the plurality of sub-selectionperiods as illustrated in FIG. 17.

For example, when a video signal is input to each of three or moresignal lines from one wiring in each of three or more sub-selectionperiods, it is only necessary to add a thin film transistor and a wiringfor controlling the thin film transistor. Note that when one gateselection period is divided into four or more sub-selection periods, onesub-selection period becomes shorter. Therefore, one gate selectionperiod is preferably divided into two or three sub-selection periods.

As another example, one selection period may be divided into a prechargeperiod Tp, the first sub-selection period T1, the second sub-selectionperiod T2, and the third sub-selection period T3 as illustrated in atiming chart in FIG. 19. The timing chart in FIG. 19 illustrates timingat which the scanning line Gi of the i-th row is selected, timing 5803 aof on/off of the first thin film transistor 5603 a, timing 5803 b ofon/off of the second thin film transistor 5603 b, timing 5803 c ofon/off of the third thin film transistor 5603 c, and a signal 5821_Jinput to the wiring 5621_J of the J-th column. As illustrated in FIG.19, the first thin film transistor 5603 a, the second thin filmtransistor 5603 b, and the third thin film transistor 5603 c are tunedon in the precharge period Tp. At this time, precharge voltage Vp inputto the wiring 5621_J is input to the signal line Sj−1, the signal lineSj, and the signal line Sj+1 via the first thin film transistor 5603 a,the second thin film transistor 5603 b, and the third thin filmtransistor 5603 c. In the first sub-selection period T1, the first thinfilm transistor 5603 a is turned on, and the second thin film transistor5603 b and the third thin film transistor 5603 c are turned off. At thistime, Data_j−1 input to the wiring 5621_J is input to the signal lineSj−1 via the first thin film transistor 5603 a. In the secondsub-selection period T2, the second thin film transistor 5603 b isturned on, and the first thin film transistor 5603 a and the third thinfilm transistor 5603 c are turned off. At this time, Data_j input to thewiring 5621_J is input to the signal line Sj via the second thin filmtransistor 5603 b. In the third sub-selection period T3, the third thinfilm transistor 5603 c is turned on, and the first thin film transistor5603 a and the second thin film transistor 5603 b are turned off. Atthis time, Data_j+1 input to the wiring 5621_J is input to the signalline Sj+1 via the third thin film transistor 5603 c.

As described above, in the signal line driver circuit in FIG. 17 towhich the timing chart in FIG. 19 is applied, the video signal can bewritten to the pixel at high speed because the signal line can beprecharged by providing a precharge selection period before asub-selection period. Note that portions in FIG. 19 which are similar tothose of FIG. 18 are denoted by common reference numerals and detaileddescription of the portions which are the same and portions which havesimilar functions is omitted.

Further, a structure of a scanning line driver circuit is described. Thescanning line driver circuit includes a shift register and a buffer. Inaddition, the scanning line driver circuit may include a level shifterin some cases. In the scanning line driver circuit, when a clock signal(CLK) and a start pulse signal (SP) are input to the shift register, aselection signal is produced. The generated selection signal is bufferedand amplified by the buffer, and the resulting signal is supplied to acorresponding scanning line. Gate electrodes of transistors in pixels ofone line are connected to the scanning line. Further, since thetransistors in the pixels of one line have to be turned on at the sametime, a buffer which can feed a large current is used.

One mode of a shift register which is used for a part of a scanning linedriver circuit is described with reference to FIG. 20 and FIG. 21.

FIG. 20 illustrates a circuit configuration of the shift register. Theshift register illustrated in FIG. 20 includes a plurality of flip-flops5701_i (any of flip-flops 5701_1 to 5701_n). The shift register isoperated with input of a first clock signal, a second clock signal, astart pulse signal, and a reset signal.

Connection relations of the shift register in FIG. 20 are described. Inthe i-th stage flip-flop 5701_i (one of the flip-flops 5701_1 to 5701_n)in the shift register of FIG. 20, a first wiring 5501 illustrated inFIG. 21 is connected to a seventh wiring 5717_i−1; a second wiring 5502illustrated in FIG. 21 is connected to a seventh wiring 5717_i+1; athird wiring 5503 illustrated in FIG. 21 is connected to a seventhwiring 5717_i; and a sixth wiring 5506 illustrated in FIG. 21 isconnected to a fifth wiring 5715.

Further, a fourth wiring 5504 illustrated in FIG. 21 is connected to asecond wiring 5712 in flip-flops of odd-numbered stages, and isconnected to a third wiring 5713 in flip-flops of even-numbered stages.A fifth wiring 5505 illustrated in FIG. 21 is connected to a fourthwiring 5714.

Note that the first wiring 5501 of the first stage flip-flop 5701_1illustrated in FIG. 21 is connected to a first wiring 5711. Moreover,the second wiring 5502 illustrated in FIG. 21 of the n-th stageflip-flop 5701_n is connected to a sixth wiring 5716.

Note that the first wiring 5711, the second wiring 5712, the thirdwiring 5713, and the sixth wiring 5716 may be referred to as a firstsignal line, a second signal line, a third signal line, and a fourthsignal line, respectively. The fourth wiring 5714 and the fifth wiring5715 may be referred to as a first power source line and a second powersource line, respectively.

Next, FIG. 21 illustrates details of the flip-flop illustrated in FIG.20. A flip-flop illustrated in FIG. 21 includes a first thin filmtransistor 5571, a second thin film transistor 5572, a third thin filmtransistor 5573, a fourth thin film transistor 5574, a fifth thin filmtransistor 5575, a sixth thin film transistor 5576, a seventh thin filmtransistor 5577, and an eighth thin film transistor 5578. Each of thefirst thin film transistor 5571, the second thin film transistor 5572,the third thin film transistor 5573, the fourth thin film transistor5574, the fifth thin film transistor 5575, the sixth thin filmtransistor 5576, the seventh thin film transistor 5577, and the eighththin film transistor 5578 is an n-channel transistor and is turned onwhen the gate-source voltage (Vgs) exceeds the threshold voltage (Vth).

Next, a connection structure of the flip-flop illustrated in FIG. 20 isdescribed below.

A first electrode (one of a source electrode and a drain electrode) ofthe first thin film transistor 5571 is connected to the fourth wiring5504. A second electrode (the other of the source electrode and thedrain electrode) of the first thin film transistor 5571 is connected tothe third wiring 5503.

A first electrode of the second thin film transistor 5572 is connectedto the sixth wiring 5506. A second electrode of the second thin filmtransistor 5572 is connected to the third wiring 5503.

A first electrode of the third thin film transistor 5573 is connected tothe fifth wiring 5505. A second electrode of the third thin filmtransistor 5573 is connected to a gate electrode of the second thin filmtransistor 5572. A gate electrode of the third thin film transistor 5573is connected to the fifth wiring 5505.

A first electrode of the fourth thin film transistor 5574 is connectedto the sixth wiring 5506. A second electrode of the fourth thin filmtransistor 5574 is connected to the gate electrode of the second thinfilm transistor 5572. A gate electrode of the fourth thin filmtransistor 5574 is connected to a gate electrode of the first thin filmtransistor 5571.

A first electrode of the fifth thin film transistor 5575 is connected tothe fifth wiring 5505. A second electrode of the fifth thin filmtransistor 5575 is connected to the gate electrode of the first thinfilm transistor 5571. A gate electrode of the fifth thin film transistor5575 is connected to the first wiring 5501.

A first electrode of the sixth thin film transistor 5576 is connected tothe sixth wiring 5506. A second electrode of the sixth thin filmtransistor 5576 is connected to the gate electrode of the first thinfilm transistor 5571. A gate electrode of the sixth thin film transistor5576 is connected to the gate electrode of the second thin filmtransistor 5572.

A first electrode of the seventh thin film transistor 5577 is connectedto the sixth wiring 5506. A second electrode of the seventh thin filmtransistor 5577 is connected to the gate electrode of the first thinfilm transistor 5571. A gate electrode of the seventh thin filmtransistor 5577 is connected to the second wiring 5502. A firstelectrode of the eighth thin film transistor 5578 is connected to thesixth wiring 5506. A second electrode of the eighth thin film transistor5578 is connected to the gate electrode of the second thin filmtransistor 5572. A gate electrode of the eighth thin film transistor5578 is connected to the first wiring 5501.

Note that a point at which the gate electrode of the first thin filmtransistor 5571, the gate electrode of the fourth thin film transistor5574, the second electrode of the fifth thin film transistor 5575, thesecond electrode of the sixth thin film transistor 5576, and the secondelectrode of the seventh thin film transistor 5577 are connected isreferred to as a node 5543. A point at which the gate electrode of thesecond thin film transistor 5572, the second electrode of the third thinfilm transistor 5573, the second electrode of the fourth thin filmtransistor 5574, the gate electrode of the sixth thin film transistor5576, and the second electrode of the eighth thin film transistor 5578are connected is referred to as a node 5544.

Note that the first wiring 5501, the second wiring 5502, the thirdwiring 5503, and the fourth wiring 5504 may be referred to as a firstsignal line, a second signal line, a third signal line, and a fourthsignal line, respectively. The fifth wiring 5505 and the sixth wiring5506 may be referred to as a first power source line and a second powersource line, respectively.

In addition, the signal line driver circuit and the scanning line drivercircuit can be formed using only the n-channel TFTs described in any oneof Embodiments 1 to 4. The n-channel TFT described in any one ofEmbodiments 1 to 4 has high mobility in the transistor characteristics,and thus a driving frequency of a driver circuit can be increased. Inaddition, in the n-channel TFT illustrated in any of Embodiments 1 to 4,since parasitic capacitance is reduced by the source and drain regionsthat are oxygen-deficient oxide semiconductor layers including indium,gallium, and zinc, the frequency characteristics (f characteristics) arehigh. For example, a scanning line driver circuit using the n-channelTFT described in any one of Embodiments 1 to 4 can operate at highspeed, and thus a frame frequency can be increased and insertion ofblack images and the like can be realized.

In addition, when the channel width of the transistor in the scanningline driver circuit is increased or a plurality of scanning line drivercircuits are provided, for example, a higher frame frequency can berealized. When a plurality of scanning line driver circuits areprovided, a scanning line driver circuit for driving even-numberedscanning lines is provided on one side and a scanning line drivercircuit for driving odd-numbered scanning lines is provided on theopposite side; thus, increase in frame frequency can be realized.

Further, when an active matrix light-emitting display device ismanufactured, a plurality of transistors are arranged in at least onepixel, and thus a plurality of scanning line driver circuits arepreferably arranged. FIG. 16B is a block diagram illustrating an exampleof an active matrix light-emitting display device.

The display device illustrated in FIG. 16B includes, over a substrate5400, a pixel portion 5401 having a plurality of pixels each providedwith a display element, a first scanning line driver circuit 5402 and asecond scanning line driver circuit 5404 that select a pixel, and asignal line driver circuit 5403 that controls input of a video signal tothe selected pixel.

When the video signal input to a pixel of the display device illustratedin FIG. 16B is a digital signal, a pixel is in a light-emitting state ora non-light-emitting state by switching of on/off of a transistor. Thus,grayscale can be displayed using an area ratio grayscale method or atime ratio grayscale method. An area ratio grayscale method refers to adriving method by which one pixel is divided into a plurality ofsub-pixels and each sub-pixel is driven independently based on a videosignal so that grayscale is displayed. Further, a time ratio grayscalemethod refers to a driving method by which a period during which a pixelis in a light-emitting state is controlled so that grayscale isdisplayed.

Since the response speed of light-emitting elements is higher than thatof liquid crystal elements or the like, the light-emitting elements aremore suitable for a time ratio grayscale method than liquid-crystalelements. Specifically, in the case of displaying with a time gray scalemethod, one frame period is divided into a plurality of sub-frameperiods. Then, in accordance with video signals, the light-emittingelement in the pixel is set in a light-emitting state or anon-light-emitting state in each sub-frame period. By dividing one frameinto a plurality of sub-frames, the total length of time, in whichpixels actually emit light in one frame period, can be controlled withvideo signals so that gray scales are displayed.

In the light-emitting device illustrated in FIG. 16B, in the case wheretwo TFTs, a switching TFT and a current control TFT, are arranged in onepixel, the first scanning line driver circuit 5402 generates a signalwhich is input to a first scanning line functioning as a gate wiring ofthe switching TFT, and the second scanning line driver circuit 5404generates a signal which is input to a second scanning line functioningas a gate wiring of the current control TFT; however, one scanning linedriver circuit may generate both the signal which is input to the firstscanning line and the signal which is input to the second scanning line.In addition, for example, there is a possibility that a plurality of thefirst scanning lines used for controlling the operation of the switchingelement are provided in each pixel, depending on the number oftransistors included in the switching element. In that case, onescanning line driver circuit may generate all signals that are input tothe plurality of first scanning lines, or a plurality of scanning linedriver circuits may generate signals that are input to the plurality offirst scanning lines.

In addition, also in the light-emitting device, a part of a drivercircuit that can include n-channel TFTs among driver circuits can beformed over the same substrate as that for the thin film transistors ofthe pixel portion. Alternatively, the signal line driver circuit and thescanning line driver circuit can be formed using only the n-channel TFTsdescribed in any one of Embodiment 1 to 4.

Moreover, the above-described driver circuit can be used for electronicpaper that drives electronic ink using an element electrically connectedto a switching element, without being limited to applications to aliquid crystal display device or a light-emitting device. The electronicpaper is also referred to as an electrophoretic display device(electrophoretic display) and has advantages in that it has the samelevel of readability as plain paper, it has lower power consumption thanother display devices, and it can be made thin and lightweight.

Electrophoretic displays can have various modes. Electrophoreticdisplays contain a plurality of microcapsules dispersed in a solvent ora solute, each microcapsule containing a first particle which ispositively charged and a second particle which is negatively charged. Byapplying an electric field to the microcapsules, the particles in themicrocapsules are moved in opposite directions to each other and onlythe color of the particles concentrated on one side is exhibited. Notethat the first particle and the second particle each contain pigment anddo not move without an electric field. Moreover, the colors of the firstparticle and the second particle are different from each other(including colorless or achroma).

In this way, an electrophoretic display is a display that utilizes aso-called dielectrophoretic effect by which a substance that has a highdielectric constant moves to a high-electric field region. Anelectrophoretic display does not need a polarizer and a countersubstrate, which are required in a liquid crystal display device, andboth the thickness and weight of the electrophoretic display device canbe a half of those of a liquid crystal display device.

A solution obtained by dispersing the aforementioned microcapsulesthroughout a solvent is referred to as electronic ink. This electronicink can be printed on a surface of glass, plastic, cloth, paper, or thelike. Furthermore, by use of a color filter or particles that have apigment, color display is possible, as well.

In addition, a display device can be completed by appropriatelyproviding a plurality of the microcapsules over a substrate to beinterposed between two electrodes, and can perform display byapplication of electric field to the microcapsules. For example, theactive matrix substrate obtained by the thin film transistor describedin any one of Embodiments 1 to 4 can be used.

Note that the first particle and the second particle in the microcapsulemay each be formed of a single material selected from a conductivematerial, an insulating material, a semiconductor material, a magneticmaterial, a liquid crystal material, a ferroelectric material, anelectroluminescent material, an electrochromic material, or amagnetophoretic material or formed of a composite material of any ofthese.

Through this process, a highly reliable light emitting display device(display panel) as a semiconductor device can be manufactured.

This embodiment can be combined with the structure disclosed in otherembodiments, as appropriate.

[Embodiment 6]

In this embodiment, a manufacturing example of an inverted staggeredthin film transistor will be described, in which at least a gateinsulating layer and an oxygen-excess oxide semiconductor layer areformed to be stacked successively without being exposed to the air. Inthis embodiment, steps up to successive formation are described, andsteps after the successive formation may be carried out in accordancewith any of Embodiments 1 to 4 to manufacture a thin film transistor.

In this specification, successive formation is carried out as follows: asubstrate to be processed is placed in an atmosphere which is controlledto be vacuum or an inert gas atmosphere (a nitrogen atmosphere or a raregas atmosphere) at all times without being exposed to a contaminantatmosphere such as air during a process from a first film formation stepusing a sputtering method to a second film formation step using asputtering method. By the successive formation, a film can be formedwhile moisture or the like is prevented from attaching again to thesubstrate to be processed which is cleaned.

Performing the process from the first film formation step to the secondfilm formation step in the same chamber is within the scope of thesuccessive formation in this specification.

In addition, the following case is also within the scope of thesuccessive formation in this specification: in the case of performingthe process from the first film formation step to the second filmformation step in plural chambers, the substrate is transferred afterthe first film formation step to another chamber without being exposedto the air and is then subjected to the second film formation.

Note that between the first film formation step and the second filmformation step, a substrate transfer step, an alignment step, aslow-cooling step, a step of heating or cooling the substrate to atemperature which is necessary for the second film formation step, orthe like may be provided. Such a process is also within the scope of thesuccessive formation in this specification.

A step in which liquid is used, such as a cleaning step, wet etching, orresist formation, may be provided between the first film formation stepand the second film formation step. This case is not within the scope ofthe successive formation in this specification.

When films are successively formed without being exposed to the air, amulti-chamber manufacturing apparatus as illustrated in FIG. 22 ispreferably used.

At the center of the manufacturing apparatus, a transfer chamber 80equipped with a transfer mechanism (typically, a transfer robot 81) fortransferring a substrate is provided. A cassette chamber 82 in which acassette case storing a plurality of substrates carried into and out ofthe transfer chamber 80 is set is connected to the transfer chamber 80.

In addition, a plurality of treatment chambers are connected to thetransfer chamber 80 via gate valves 83 to 88. In this embodiment, anexample in which five treatment chambers are connected to the transferchamber 80 having a hexagonal top shape is illustrated. Note that, bychanging the top shape of the transfer chamber 80, the number oftreatment chambers which can be connected to the transfer chamber can bechanged. For example, three treatment chambers can be connected to atransfer chamber having a tetragonal top shape, or seven treatmentchambers can be connected to a transfer chamber having an octagonal topshape.

At least one treatment chamber among the five treatment chambers is asputtering chamber in which sputtering is performed. The sputteringchamber is provided with, at least inside the chamber, a sputteringtarget, a mechanism for applying electric power or a gas introductionmeans for sputtering the target, a substrate holder for holding asubstrate at a predetermined position, and the like. Further, thesputtering chamber is provided with a pressure control means with whichthe pressure in the chamber is controlled, so that the pressure isreduced in the sputtering chamber.

Examples of a sputtering method include an RF sputtering method in whicha high-frequency power source is used for a sputtering power source, aDC sputtering method, and a pulsed DC sputtering method in which a biasis applied in a pulsed manner. An RF sputtering method is mainly used inthe case of forming an insulating film, and a DC sputtering method ismainly used in the case of forming a metal film.

In addition, there is also a multi-source sputtering apparatus in whicha plurality of targets of different materials can be set. With themulti-source sputtering apparatus, films of different materials can beformed to be stacked in the same chamber, or a film of plural kinds ofmaterials can be formed by electric discharge at the same time in thesame chamber.

In addition, there are a sputtering apparatus provided with a magnetsystem inside the chamber and used for a magnetron sputtering method,and a sputtering apparatus used for an ECR sputtering method in whichplasma generated with the use of microwaves is used without using glowdischarge.

In the sputtering chamber of this embodiment, any of various sputteringmethods described above is used as appropriate.

In addition, as a film formation method, there are also a reactivesputtering method in which a target substance and a sputtering gascomponent chemically reacts with each other during film formation toform a thin film of a compound thereof, and a bias sputtering method inwhich voltage is also applied to a substrate during film formation.

In addition, among the five treatment chambers, one of the treatmentchambers other than the sputtering chamber is a heating chamber in whicha substrate is preheated or the like before sputtering, a coolingchamber in which a substrate is cooled after sputtering, or a chamber inwhich plasma treatment is performed.

Next, an example of an operation of the manufacturing apparatus isdescribed.

A substrate cassette storing a substrate 94 whose deposition targetsurface faces downward is set in the cassette chamber 82, and thecassette chamber 82 is placed in a reduced pressure state by a vacuumexhaust means provided in the cassette chamber 82. In each of thetreatment chambers and the transfer chamber 80, the pressure is reducedin advance by a vacuum exhaust means provided in each chamber.Accordingly, during transfer of the substrate between the treatmentchambers, the substrate is not exposed to the air and can be kept clean.

Note that the substrate 94 which is placed so that its deposition targetsurface faces downward is provided in advance with at least a gateelectrode. A base insulating film may be provided between the gateelectrode and the substrate. For example, the base insulating film maybe, but not particularly limited to, a silicon nitride film or a siliconnitride oxide film formed by a sputtering method, or the like. When asubstrate formed of glass containing alkali metal is used as thesubstrate 94, the base insulating film has an effect of preventingmobile ions of sodium or the like from entering a semiconductor regionthereover from the substrate so that variation in electricalcharacteristics of a TFT can be suppressed.

In this embodiment, a substrate provided with a silicon nitride filmwhich is formed as a first layer of a gate insulating layer by a plasmaCVD method to cover a gate electrode is used. A silicon nitride filmformed by a plasma CVD method is dense and can suppress generation of apinhole or the like when used as the first layer of the gate insulatinglayer. Although an example in which the gate insulating layer has astacked-layer structure is described in this embodiment, the presentinvention is not particularly limited thereto, and a single-layerstructure or a stacked-layer structure of three or more layers may alsobe employed.

Then, the gate valve 83 is opened and the substrate 94 which is thefirst substrate is picked up from the cassette by the transfer robot 81.After that, the gate valve 84 is opened, the substrate 94 is transferredto a first treatment chamber 89, and then, the gate valve 84 is closed.In the first treatment chamber 89, by heating the substrate 94 with aheater or a lamp, moisture or the like attached to the substrate 94 isremoved. In particular, when the gate insulating layer containsmoisture, there is a risk that electrical characteristics of a TFT arechanged; therefore, heating before film formation by sputtering iseffective. In the case where moisture has been sufficiently removed atthe time when the substrate is set in the cassette chamber 82, thisheating treatment is not necessary.

In addition, the first treatment chamber 89 may be provided with aplasma treatment means, and a surface of the first layer of the gateinsulating layer may be subjected to plasma treatment. Furthermore, thecassette chamber 82 may be provided with a heating means, and heatingfor removing moisture may be performed in the cassette chamber 82.

Then, the gate valve 84 is opened and the substrate is transferred tothe transfer chamber 80 by the transfer robot 81. After that, the gatevalve 85 is opened and the substrate is transferred to a secondtreatment chamber 90, and the gate valve 85 is closed.

In this embodiment, the second treatment chamber 90 is a sputteringchamber in which sputtering is performed using an RF magnetronsputtering method.

In the second treatment chamber 90, a silicon nitride (SiNx) film isformed as the first layer of the gate insulating layer.

After the SiNx film is formed, without exposure to air, the gate valve85 is opened and the substrate is transferred to the transfer chamber 80by the transfer robot 81. Then, the gate valve 86 is opened, thesubstrate is transferred to a third treatment chamber 91, and the gatevalve 86 is closed.

In this embodiment, the third treatment chamber 91 is a sputteringchamber in which sputtering is performed using an RF magnetronsputtering method.

In the third treatment chamber 91, a silicon oxide (SiOx) film is formedas a second layer of the gate insulating layer. As the gate insulatinglayer, other than a silicon oxide film, an aluminum oxide (Al₂O₃) film,a magnesium oxide (MgOx) film, an aluminum nitride (AlNx) film, anyttrium oxide (YOx) film, or the like can be used.

In order to reduce hydrogen in the gate insulating layer, the gateinsulating layer is formed by sputtering using a single crystal silicontarget and using an argon gas and an oxygen gas. It is very important toprevent hydrogen in the gate insulating layer from diffusing andreacting with excess oxygen in an IGZO film to produce an H₂O component.It is also important to form the gate insulating layer and the IGZO filmby successive formation to prevent moisture from being attached to theinterface. Thus, it is preferable that the chamber be evacuated tovacuum with a cryopump or the like and sputtering be performed inultra-high vacuum range, i.e., UHV range, with an ultimate pressure of1×10⁻⁷ Torr to 1×10⁻¹⁰ Torr (about 1×10⁻⁵ Pa to 1×10⁻⁸ Pa). In addition,when the gate insulating layer and the IGZO film are successivelystacked such that the interface is not exposed to the air, oxygenradical treatment to which is performed on a surface of the gateinsulating layer to change the surface into an oxygen-excess region iseffective in forming a source of oxygen for interface reformation of theIGZO film during heat treatment for reliability improvement in a laterstep.

In addition, when an oxygen-excess region is provided by subjecting thegate insulating layer to oxygen radical treatment, the oxygenconcentration at a surface on the IGZO side is higher than that in thegate insulating layer. When oxygen radical treatment is performed, theoxygen concentration at the interface between the gate insulating layerand the IGZO film is higher than when oxygen radical treatment is notperformed.

When the gate insulating layer is subjected to oxygen radical treatment,the IGZO film is stacked, and heat treatment is performed, the oxygenconcentration in the IGZO film on the gate insulating layer side is alsoincreased.

A small amount of a halogen element such as fluorine or chlorine may beadded to the gate insulating layer so as to immobilize mobile ions ofsodium or the like. As a method for adding a small amount of a halogenelement, sputtering is performed by introducing a gas containing ahalogen element into the chamber. In the case where a gas containing ahalogen element is introduced, the exhaust means of the chamber needs tobe provided with an abatement system. The peak of the concentration of ahalogen element to be contained in the gate insulating layer, whenmeasured by secondary ion mass spectrometry (SIMS), is preferably in therange of from 1×10¹⁵ cm⁻³ to 1×10²⁰ cm⁻³ inclusive.

After the SiOx film is formed, without exposure to air, the gate valve86 is opened and the substrate is transferred to the transfer chamber 80by the transfer robot 81. Then, the gate valve 87 is opened, thesubstrate is transferred to a fourth treatment chamber 92, and the gatevalve 87 is closed.

In this embodiment, the fourth treatment chamber 92 is a sputteringchamber in which sputtering is performed using a DC magnetron sputteringmethod. In the fourth treatment chamber 92, a surface of the gateinsulating layer is subjected to oxygen radical treatment, anoxygen-excess oxide semiconductor layer (the IGZO film) is formed as asemiconductor layer, and oxygen-deficient oxide semiconductor layers areformed as source and drain regions.

As the oxygen radical treatment of the surface of the gate insulatinglayer, plasma treatment such as reverse sputtering may be performed. Thereverse sputtering is a method by which voltage is applied to asubstrate side without being applied to a target side in an oxygenatmosphere or an oxygen and argon atmosphere and plasma is generated sothat a substrate surface is reformed. Furthermore, the gate insulatinglayer may be subjected to nitriding treatment; plasma treatment such asreverse sputtering may be performed in a nitrogen atmosphere.

The IGZO film can be formed using an oxide semiconductor targetcontaining In, Ga, and Zn, in a rare gas atmosphere or an oxygenatmosphere. Here, an oxide semiconductor containing In, Ga, and Zn isused as a target and sputtering is performed by a pulsed DC sputteringmethod in an atmosphere containing only oxygen or an atmospherecontaining oxygen of 90% or higher and Ar of 10% or lower so that asmuch oxygen as possible is contained in the IGZO film, whereby anoxygen-excess IGZO film is formed.

As described above, the oxygen-excess SiOx film and the oxygen-excessIGZO film are formed successively without being exposed to the air,whereby an interface state between the oxygen-excess films can bestabilized, and the reliability of a TFT can be improved. If thesubstrate is exposed to the air before formation of the IGZO film,moisture or the like is attached and the interface state is adverselyaffected, which may cause defects such as variation in thresholdvoltages, deterioration in electrical characteristics, and a normally-onTFT. Moisture is a hydrogen compound. When the films are successivelyformed without being exposed to the air, the hydrogen compound can beprevented from existing at the interface. Therefore, by successiveformation, variation in threshold voltages can be reduced, deteriorationin electrical characteristics can be prevented, or shift of the TFTcharacteristics to the normally-on side can be suppressed, or desirably,the shift of the TFT characteristics can be prevented.

Alternatively, in the third treatment chamber 91 which is a sputteringchamber, both an artificial quartz target and an oxide semiconductortarget containing In, Ga, and Zn are placed, and the films aresuccessively formed by using shutters; accordingly, the films can bestacked in the same chamber. The shutters are provided between thetargets and the substrate; one of the shutters for a target which isused for film formation is opened, and the other one of the shutters fora target which is not used for film formation is closed. Advantages of aprocess in which the films are stacked in the same chamber are thefollowing points: reduction of the number of chambers which are used,and prevention of the attachment of particles or the like to thesubstrate during transfer of the substrate between different chambers.

Unless in a process where a gray-tone mask is used, the substrate atthis stage is carried out of the manufacturing apparatus via thecassette chamber and the oxygen-excess IGZO film is processed by etchingusing a photolithography technique. In a process where a gray-tone maskis used, successive formation described below is subsequently performed.

Subsequently, in the fourth treatment chamber 92, sputtering isperformed by a pulsed DC sputtering method in an atmosphere containingonly a rare gas to form an oxygen-deficient IGZO film on and in contactwith the oxygen-excess IGZO film. This oxygen-deficient IGZO film has alower oxygen concentration than the oxygen-excess IGZO film. Theoxygen-deficient IGZO film functions as a source region or a drainregion.

Then, without exposure to air, the gate valve 87 is opened, and thesubstrate is transferred to the transfer chamber 80 by the transferrobot 81. The gate valve 88 is opened, the substrate is transferred to afifth treatment chamber 93, and the gate valve 88 is closed.

In this embodiment, the fifth treatment chamber 93 is a sputteringchamber in which sputtering is performed using a DC magnetron sputteringmethod. In the fifth treatment chamber 93, a metal multi-layer film(conductive film) to be a source or drain electrode layer is formed. Inthe fifth treatment chamber 93 which is a sputtering chamber, both atitanium target and an aluminum target are placed. Films are formed tobe stacked in the same chamber by successive formation using shutters.Here, an aluminum film is stacked over a titanium film, and a titaniumfilm is further stacked over the aluminum film.

In this manner, in the case of using a gray-tone mask, the oxygen-excessSiOx film, the oxygen-excess IGZO film, the oxygen-deficient IGZO film,and the metal multi-layer film can be formed successively without beingexposed to the air. In particular, an interface state of theoxygen-excess IGZO film can be stabilized, and the reliability of a TFTcan be improved. If the substrate is exposed to the air before or afterformation of the IGZO film, moisture or the like is attached and theinterface state is adversely affected, which may cause defects such asvariation in threshold voltages, deterioration in electricalcharacteristics, and a normally-on TFT. Moisture is a hydrogen compound.When the films are successively formed without being exposed to the air,the hydrogen compound can be prevented from existing at the interface ofthe IGZO film. Therefore, by successive formation of the four films,variation in threshold voltages can be reduced, deterioration inelectrical characteristics can be prevented, or shift of the TFTcharacteristics to the normally-on side can be suppressed, or desirably,the shift of the TFT characteristics can be prevented.

Further, the oxygen-deficient IGZO film and the metal multi-layer filmto be source and drain electrode layers are successively formed withoutbeing exposed to the air, whereby a favorable interface state betweenthe oxygen-deficient IGZO film and the metal multi-layer film can beobtained and contact resistance can be reduced.

Alternatively, in the third treatment chamber 91 which is a sputteringchamber, both an artificial quartz target and an oxide semiconductortarget containing In, Ga, and Zn are placed, and three films aresuccessively formed by using shutters and sequentially introducingdifferent gases; accordingly, the films can be stacked in the samechamber. Advantages of a process in which the films are stacked in thesame chamber are the following points: reduction of the number ofchambers which are used, and prevention of the attachment of particlesor the like to the substrate during transfer of the substrate betweendifferent chambers.

After the above-described steps are repeated to perform a film formationprocess on the plurality of substrates in the cassette case, thecassette chamber that is in vacuum is opened to air, and the substratesand the cassette are taken out.

Further, heat treatment, specifically, heat treatment at 200° C. to 600°C., preferably, heat treatment at 300° C. to 500° C., can be performedin the first treatment chamber 89 after formation of the oxygen-excessIGZO film and the oxygen-deficient IGZO film. By this heat treatment,electrical characteristics of an inverted staggered thin film transistorcan be improved. Timing of the heat treatment is not limited to aparticular timing as long as the heat treatment is performed afterformation of the oxygen-excess IGZO film and the oxygen-deficient IGZOfilm and can be performed immediately after formation of theoxygen-excess IGZO film and the oxygen-deficient IGZO film orimmediately after formation of the metal multi-layer film, for example.

Then, each of the stacked films is processed by etching using agray-tone mask. The films may be etched using dry etching or wetetching, or etched selectively by plural times of etching.

Vacuum baking may be performed after formation of a semiconductor layer,source and drain regions, and source and drain electrode layers byetching and before formation of a protective film.

In addition, oxygen radical treatment may be performed after thesemiconductor layer, the source region, the drain region, and the sourceand drain electrode layers are formed by etching, and before theprotective film is formed. When exposed part which is the channelformation region of the semiconductor layer is subjected to oxygenradical treatment, a surface of the semiconductor layer can be anoxygen-excess region.

When the surface of the semiconductor layer is an oxygen-excess region,hydrogen can be prevented from mixing to the semiconductor layer. Inaddition, a back channel becomes an oxygen-deficient region, whichprevents conduction between the source and drain; therefore, off currentcan be reduced. In this manner, the back channel portion of thesemiconductor layer can also be an oxygen-excess region; therefore, in asimilar manner to oxygen radical treatment on the gate insulating layer,oxygen radical treatment on the back channel portion of thesemiconductor layer is effective.

Steps after the etching are carried out in accordance with any one ofEmbodiments 1 to 4, whereby an inverted staggered thin film transistorcan be manufactured.

In this embodiment, a multi-chamber manufacturing apparatus is describedas an example, but successive formation may be performed withoutexposure to air by using an in-line manufacturing apparatus in whichsputtering chambers are connected in series.

The apparatus illustrated in FIG. 22 has a so-called face-down treatmentchamber in which the deposition target surface of the substrate facesdownward, but may also have a vertical placement treatment chamber inwhich a substrate is placed vertically. The vertical placement treatmentchamber has an advantage that a footprint is smaller than that of aface-down treatment chamber and can be effectively used in the casewhere a large-area substrate which may bend due to its own weight isused.

[Embodiment 7]

A thin film transistor of an embodiment of the present invention ismanufactured, and a semiconductor device having a display function (alsoreferred to as a display device) can be manufactured using the thin filmtransistor in a pixel portion and further in a driver circuit. Further,part or whole of a driver circuit can be formed over the same substrateas a pixel portion, using a thin film transistor of an embodiment of thepresent invention, whereby a system-on-panel can be obtained.

The display device includes a display element. As the display element, aliquid crystal element (also referred to as a liquid crystal displayelement) or a light-emitting element (also referred to as alight-emitting display element) can be used. Light-emitting elementsinclude, in its category, an element whose luminance is controlled bycurrent or voltage, and specifically include an inorganicelectroluminescent (EL) element, an organic EL element, and the like.Further, a display medium whose contrast is changed by an electriceffect, such as an electronic ink, can be used.

In addition, the display device includes a panel in which the displayelement is sealed, and a module in which an IC including a controller orthe like is mounted on the panel. Furthermore, in an embodiment of thepresent invention, an element substrate, which corresponds to oneembodiment before the display element is completed in a manufacturingprocess of the display device, is provided with a means for supplyingcurrent to the display element in each of a plurality of pixels.Specifically, the element substrate may be in a state of being providedwith only a pixel electrode of the display element, a state after aconductive film to be a pixel electrode is formed and before theconductive film is etched to form the pixel electrode, or any of otherstates.

Note that a display device in this specification means an image displaydevice, a display device, or a light source (including a lightingdevice). Further, the display device includes any of the followingmodules in its category: a module to which a connector such as aflexible printed circuit (FPC), tape automated bonding (TAB) tape, or atape carrier package (TCP) is attached; a module having TAB tape or aTCP which is provided with a printed wiring board at the end thereof;and a module having an integrated circuit (IC) which is directly mountedon a display element by a chip-on-glass (COG) method.

In this embodiment, an example of a liquid crystal display device willbe described as an embodiment of a semiconductor device.

FIGS. 23A and 23B illustrate an active matrix liquid crystal displaydevice to which the present invention is applied. FIG. 23A is a planview of the liquid crystal display device. FIG. 23B is a cross-sectionalview taken along a line V-X of FIG. 23A. A thin film transistor 201 usedin a semiconductor device can be manufactured in a manner similar to thethin film transistor described in Embodiment 2 and is a highly reliablethin film transistor including an oxygen-excess oxide semiconductorlayer and an oxygen-deficient oxide semiconductor layer over a gateinsulating layer which has been subjected to oxygen radical treatment.The thin film transistor described in Embodiment 1, 3, or 4 can also beused as the thin film transistor 201 of this embodiment.

The liquid crystal display device of this embodiment illustrated in FIG.23A includes a source wiring layer 202, the thin film transistor 201which is an inverted staggered thin film transistor with a multi-gatestructure, a gate wiring layer 203, and a capacitor wiring layer 204.

Further, in FIG. 23B, in the liquid crystal display device of thisembodiment, a substrate 200 provided with the thin film transistor 201with a multi-gate structure, an insulating layer 211, an insulatinglayer 212, an insulating layer 213, an electrode layer 255 used for adisplay element, an insulating layer 261 serving as an alignment film,and a polarizing plate 268 and a substrate 266 provided with aninsulating layer 263 serving as an alignment film, an electrode layer265 used for a display element, a coloring layer 264 serving as a colorfilter, and a polarizing plate 267 face to each other with a liquidcrystal layer 262 interposed therebetween; thus, a liquid crystaldisplay element 260 is formed.

Alternatively, liquid crystal exhibiting a blue phase for which analignment film is unnecessary may be used. A blue phase is one of liquidcrystal phases, which is generated just before a cholesteric phasechanges into an isotropic phase while temperature of cholesteric liquidcrystal is increased. Since the blue phase is generated within an onlynarrow range of temperature, liquid crystal composition containing achiral agent at 5 wt % or more so as to improve the temperature range isused for the liquid crystal layer 262. The liquid crystal compositionwhich includes liquid crystal exhibiting a blue phase and a chiral agenthave such characteristics that the response time is 10 μs to 100 μs,which is short, the alignment process is unnecessary because the liquidcrystal composition has optical isotropy, and viewing angle dependencyis small.

Although FIGS. 23A and 23B illustrate an example of a transmissiveliquid crystal display device, the present invention can also be appliedto a reflective liquid crystal display device and a transflective liquidcrystal display device.

Although FIGS. 23A and 23B illustrate an example of a liquid crystaldisplay device in which the polarizing plate 267 is provided on theouter side of the substrate 266 (on the viewer side) and the coloringlayer 264 and the electrode layer 265 used for a display element areprovided on the inner side of the substrate 266 in that order, thepolarizing plate 267 may be provided on the inner side of the substrate266. The stacked structure of the polarizing plate and the coloringlayer is not limited to that illustrated in FIG. 23B and may be set asappropriate depending on materials of the polarizing plate and thecoloring layer or conditions of manufacturing steps. Further, alight-blocking film serving as a black matrix may be provided.

In this embodiment, in order to reduce surface unevenness of the thinfilm transistor and to improve reliability of the thin film transistor,the thin film transistor obtained in Embodiment 1 is covered withinsulating layers (the insulating layer 211, the insulating layer 212,and the insulating layer 213) functioning as a protective film or aplanarizing insulating film. Note that the protective film is providedto prevent entry of contaminant impurities such as an organic substance,a metal, or moisture floating in air and is preferably a dense film. Theprotective film may be formed by a sputtering method with a single layeror a stacked layer of a silicon oxide film, a silicon nitride film, asilicon oxynitride film, a silicon nitride oxide film, an aluminum oxidefilm, an aluminum nitride film, an aluminum oxynitride film, and/or analuminum nitride oxide film. Although an example in which the protectivefilm is formed by a sputtering method is described in this embodiment,the present invention is not particularly limited thereto, and theprotective film may be formed by a variety of methods.

As a first layer of the protective film, the insulating layer 211 isformed. The insulating layer 211 has an effect of preventing hillock ofan aluminum film. Here, as the insulating layer 211, a silicon oxidefilm is formed by a sputtering method.

As a second layer of the protective film, the insulating layer 212 isformed. Here, as the insulating layer 212, a silicon nitride film isformed by a sputtering method. The use of the silicon nitride film asone layer of the protective film can prevent mobile ions of sodium orthe like from entering a semiconductor region so that variation inelectrical characteristics of the TFT can be suppressed.

After the protective film is formed, the IGZO semiconductor layer may besubjected to annealing (300° C. to 400° C.).

In addition, the insulating layer 213 is formed as the planarizinginsulating film. As the insulating layer 213, an organic material havingheat resistance such as polyimide, acrylic, benzocyclobutene, polyamide,or epoxy can be used. Other than such organic materials, it is alsopossible to use a low-dielectric constant material (a low-k material), asiloxane-based resin, phosphosilicate glass (PSG), borophosphosilicateglass (BPSG), or the like. A siloxane-based resin may include as asubstituent at least one of fluorine, an alkyl group, and an aryl group,as well as hydrogen. Note that the insulating layer 213 may be formed bystacking a plurality of insulating films formed of these materials.

Note that a siloxane-based resin is a resin formed from a siloxanematerial as a starting material and having the bond of Si—O—Si. Thesiloxane-based resin may include as a substituent at least one offluorine, an alkyl group, and aromatic hydrocarbon, as well as hydrogen.

A method for forming the insulating layer 213 is not particularlylimited, and the following method can be employed depending on thematerial: a sputtering method, an SOG method, a spin coating method, adipping method, a spray coating method, a droplet discharge method(e.g., an ink-jet method, screen printing, offset printing, or thelike), a doctor knife, a roll coater, a curtain coater, a knife coater,or the like. In the case of forming the insulating layer 213 using amaterial solution, annealing (300° C. to 400° C.) of the IGZOsemiconductor layer may be performed at the same time as a baking step.The baking step of the insulating layer 213 also serves as annealing ofthe IGZO semiconductor layer, whereby a semiconductor device can bemanufactured efficiently.

The electrode layers 255 and 265 each serving as a pixel electrode layercan be formed using a light-transmitting conductive material such asindium oxide including tungsten oxide, indium zinc oxide includingtungsten oxide, indium oxide including titanium oxide, indium tin oxideincluding titanium oxide, indium tin oxide (hereinafter referred to asITO), indium zinc oxide, indium tin oxide to which silicon oxide isadded, or the like.

The electrode layers 255 and 265 can also be formed using a conductivecomposition including a conductive high molecule (also referred to as aconductive polymer). A pixel electrode formed using the conductivecomposition preferably has a sheet resistance of less than or equal to10000 Ω/square and a light transmittance of greater than or equal to 70%at a wavelength of 550 nm. Further, the resistivity of the conductivehigh molecule included in the conductive composition is preferably lessthan or equal to 0.1 Ω·cm.

As the conductive high molecule, a so-called π-electron conjugatedconductive polymer can be used. For example, polyaniline or a derivativethereof, polypyrrole or a derivative thereof, polythiophene or aderivative thereof, a copolymer of two or more kinds of them, and thelike can be given.

Through this process, a highly reliable liquid crystal display device asa semiconductor device can be manufactured.

This embodiment can be combined with any of the other embodiments asappropriate.

[Embodiment 8]

In this embodiment, an example of electronic paper will be described asa semiconductor device according to an embodiment of the presentinvention.

FIG. 30 illustrates active matrix electronic paper as an example of asemiconductor device to which an embodiment of the present invention isapplied. A thin film transistor 581 used for the semiconductor devicecan be manufactured in a similar manner to the thin film transistordescribed in Embodiment 2. The thin film transistor 581 is a thin filmtransistor having high reliability, which includes an oxygen-excessoxide semiconductor layer over a gate insulating layer subjected tooxygen radical treatment and oxygen-deficient oxide semiconductor layersfunctioning as source and drain regions. Any of the thin filmtransistors described in Embodiments 1, 3, and 4 can also be used as thethin film transistor 581 of this embodiment.

The electronic paper in FIG. 30 is an example of a display device usinga twisting ball display system. The twisting ball display system refersto a method in which spherical particles each colored in black and whiteare arranged between a first electrode layer and a second electrodelayer which are electrode layers used for a display element, and apotential difference is generated between the first electrode layer andthe second electrode layer to control orientation of the sphericalparticles, so that display is performed.

The thin film transistor 581 is an inverted staggered thin filmtransistor with a multi-gate structure, and a source electrode layer ora drain electrode layer thereof is in contact with a first electrodelayer 587 at an opening formed in an insulating layer 585, whereby thethin film transistor 581 is electrically connected to the firstelectrode layer 587. Between the first electrode layer 587 and a secondelectrode layer 588, spherical particles 589 each having a black region590 a, a white region 590 b, and a cavity 594 around the regions whichis filled with liquid are provided. A space around the sphericalparticles 589 is filled with a filler 595 such as a resin (see FIG. 30).

Further, instead of the twisting ball, an electrophoretic element canalso be used. A microcapsule having a diameter of about 10 μm to 200 μmin which transparent liquid, positively charged white microparticles,and negatively charged black microparticles are encapsulated, is used.In the microcapsule which is provided between the first electrode layerand the second electrode layer, when an electric field is applied by thefirst electrode layer and the second electrode layer, the whitemicroparticles and black microparticles move to opposite sides, so thatwhite or black can be displayed. A display element using this principleis an electrophoretic display element and is called electronic paper ingeneral. The electrophoretic display element has higher reflectivitythan a liquid crystal display element, and thus, an auxiliary light isunnecessary, power consumption is low, and a display portion can berecognized in a dim place. In addition, even when power is not suppliedto the display portion, an image which has been displayed once can bemaintained. Accordingly, a displayed image can be stored even if asemiconductor device having a display function (which may be referred tosimply as a display device or a semiconductor device provided with adisplay device) is distanced from an electric wave source.

Through this process, highly reliable electronic paper can bemanufactured as a semiconductor device.

This embodiment can be combined with the structure described in otherembodiments, as appropriate.

[Embodiment 9]

In this embodiment, an example of a light-emitting display device willbe described as a semiconductor device according an embodiment of thepresent invention. As a display element included in a display device, alight-emitting element utilizing electroluminescence is described here.Light-emitting elements utilizing electroluminescence are classifiedaccording to whether a light-emitting material is an organic compound oran inorganic compound. In general, the former is referred to as anorganic EL element, and the latter is referred to as an inorganic ELelement.

In an organic EL element, by application of voltage to a light-emittingelement, electrons and holes are separately injected from a pair ofelectrodes into a layer containing a light-emitting organic compound,and current flows. The carriers (electrons and holes) are recombined,and thus, the light-emitting organic compound is excited. Thelight-emitting organic compound returns to a ground state from theexcited state, thereby emitting light. Owing to such a mechanism, thislight-emitting element is referred to as a current-excitationlight-emitting element.

The inorganic EL elements are classified according to their elementstructures into a dispersion-type inorganic EL element and a thin-filminorganic EL element. A dispersion-type inorganic EL element has alight-emitting layer where particles of a light-emitting material aredispersed in a binder, and its light emission mechanism isdonor-acceptor recombination type light emission that utilizes a donorlevel and an acceptor level. A thin-film inorganic EL element has astructure where a light-emitting layer is sandwiched between dielectriclayers, which are further sandwiched between electrodes, and its lightemission mechanism is localized type light emission that utilizesinner-shell electron transition of metal ions. Note that description ismade here using an organic EL element as a light-emitting element.

FIGS. 26A and 26B illustrate an active matrix light-emitting displaydevice as an example of a semiconductor device to which an embodiment ofthe present invention is applied. FIG. 26A is a plan view of thelight-emitting display device, and FIG. 26B is a cross-sectional viewalong line Y-Z of FIG. 26A. FIG. 27 shows an equivalent circuit of thelight-emitting display device illustrated in FIGS. 26A and 26B.

Thin film transistors 301 and 302 used for the semiconductor device canbe manufactured in a similar manner to the thin film transistorsdescribed in Embodiment 1 and Embodiment 2. The thin film transistors301 and 302 are thin film transistors having high reliability, each ofwhich includes an oxygen-excess oxide semiconductor layer over a gateinsulating layer subjected to oxygen radical treatment andoxygen-deficient oxide semiconductor layers functioning as source anddrain regions. The thin film transistor described in Embodiments 3 or 4can also be used as the thin film transistors 301 and 302 of thisembodiment.

The light-emitting display device of this embodiment illustrated in FIG.26A and FIG. 26B includes the thin film transistors 301 with amulti-gate structure, the thin film transistor 302, a light-emittingelement 303, a capacitor element 304, a source wiring layer 305, a gatewiring layer 306, and a power source line 307. The thin film transistors301 and 302 are n-channel thin film transistors.

In FIG. 26B, the light-emitting display device of this embodimentincludes the thin film transistor 302; an insulating layer 311; aninsulating layer 312; an insulating layer 313; a partition wall 321; anda first electrode layer 320, an electroluminescent layer 322, and asecond electrode layer 323 which are used for the light-emitting element303.

The insulating layer 313 is preferably formed using an organic resinsuch as acrylic, polyimide, or polyamide or using siloxane.

Since the thin film transistor 302 in the pixel is n-type in thisembodiment, the first electrode layer 320 which is a pixel electrodelayer is desirably used as a cathode. Specifically, for the cathode, amaterial with a low work function such as Ca, Al, MgAg, or AlLi can beused.

The partition wall 321 is formed using an organic resin film, aninorganic insulating film, or organic polysiloxane. It is particularlypreferable that the partition wall 321 be formed using a photosensitivematerial and an opening be formed over the first electrode layer 320 sothat a sidewall of the opening is formed as an inclined surface withcontinuous curvature.

The electroluminescent layer 322 may be formed using a single layer or aplurality of layers stacked.

The second electrode layer 323 used as an anode is formed to cover theelectroluminescent layer 322. The second electrode layer 323 can beformed using a light-transmitting conductive film using any of thelight-transmitting conductive materials listed in Embodiment 7 for thepixel electrode layer. The second electrode layer 323 may also be formedusing a titanium nitride film or a titanium film instead of theabove-described light-transmitting conductive film. The light-emittingelement 303 is formed by overlapping of the first electrode layer 320,the electroluminescent layer 322, and the second electrode layer 323.After that, a protective film may be formed over the second electrodelayer 323 and the partition wall 321 in order to prevent entry ofoxygen, hydrogen, moisture, carbon dioxide, or the like into thelight-emitting element 303. As the protective film, a silicon nitridefilm, a silicon nitride oxide film, a DLC film, or the like can beformed.

Further, in a practical case, it is preferable that a display devicecompleted to the state illustrated in FIG. 26B be packaged (sealed) witha protective film (such as a laminate film or an ultraviolet curableresin film) or a cover material with high air-tightness and littledegasification so that the display device is not exposed to the outsideair.

Next, structures of the light-emitting element will be described withreference to FIGS. 28A to 28C. A cross-sectional structure of a pixelwill be described by taking an n-channel driving TFT as an example. TFTs7001, 7011, and 7021 which are driving TFTs used for the semiconductordevices of FIGS. 28A to 28C can be manufactured in a similar manner tothe thin film transistor described in Embodiment 1. The TFTs 7001, 7011,and 7021 are thin film transistors having high reliability, each ofwhich includes an oxygen-excess oxide semiconductor layer over a gateinsulating layer subjected to oxygen radical treatment andoxygen-deficient oxide semiconductor layers functioning as source anddrain regions. Alternatively, any of the thin film transistors describedin Embodiments 2 to 4 can be employed as the driving TFTs 7001, 7011,and 7021.

In order to extract light emitted from the light-emitting element, atleast one of the anode and the cathode is required to be transparent. Athin film transistor and a light-emitting element are formed over asubstrate. A light-emitting element can have a top emission structure inwhich light emission is extracted through the surface opposite to thesubstrate; a bottom emission structure in which light emission isextracted through the surface on the substrate side; or a dual emissionstructure in which light emission is extracted through the surfaceopposite to the substrate and the surface on the substrate side. Thepixel structure according to an embodiment of the present invention canbe applied to a light-emitting element having any of these emissionstructures.

A light-emitting element having a top emission structure will bedescribed with reference to FIG. 28A

FIG. 28A is a cross-sectional view of a pixel in the case where thedriving TFT 7001 is of an n-type and light is emitted from alight-emitting element 7002 to an anode 7005 side. In FIG. 28A, acathode 7003 of the light-emitting element 7002 is electricallyconnected to the driving TFT 7001, and a light-emitting layer 7004 andthe anode 7005 are stacked in this order over the cathode 7003. Thecathode 7003 can be formed using a variety of conductive materials aslong as they have a low work function and reflect light. For example,Ca, Al, CaF, MgAg, AlLi, or the like is preferably used. Thelight-emitting layer 7004 may be formed using a single layer or aplurality of layers stacked. When the light-emitting layer 7004 isformed using a plurality of layers, the light-emitting layer 7004 isformed by stacking an electron-injecting layer, an electron-transportinglayer, a light-emitting layer, a hole-transporting layer, and ahole-injecting layer in this order over the cathode 7003. It is notnecessary to form all of these layers. The anode 7005 is formed using alight-transmitting conductive film such as a film of indium oxidecontaining tungsten oxide, indium zinc oxide containing tungsten oxide,indium oxide containing titanium oxide, indium tin oxide containingtitanium oxide, indium tin oxide (hereinafter referred to as ITO),indium zinc oxide, or indium tin oxide to which silicon oxide is added.

The light-emitting element 7002 corresponds to a region where thecathode 7003 and the anode 7005 sandwich the light-emitting layer 7004.In the case of the pixel illustrated in FIG. 28A, light is emitted fromthe light-emitting element 7002 to the anode 7005 side as indicated byan arrow.

Next, a light-emitting element having a bottom emission structure willbe described with reference to FIG. 28B. FIG. 28B is a cross-sectionalview of a pixel in the case where the driving TFT 7011 is of an n-typeand light is emitted from a light-emitting element 7012 to a cathode7013 side. In FIG. 28B, the cathode 7013 of the light-emitting element7012 is formed over a light-transmitting conductive film 7017 that iselectrically connected to the driving TFT 7011, and a light-emittinglayer 7014 and an anode 7015 are stacked in this order over the cathode7013. A light-blocking film 7016 for reflecting or blocking light may beformed to cover the anode 7015 when the anode 7015 has alight-transmitting property. For the cathode 7013, various materials canbe used as in the case of FIG. 28A as long as they are conductivematerials having a low work function. The cathode 7013 is formed to havea thickness that can transmit light (preferably, approximately 5 nm to30 nm). For example, an aluminum film with a thickness of 20 nm can beused as the cathode 7013. In a manner similar to the case of FIG. 28A,the light-emitting layer 7014 may be formed using either a single layeror a plurality of layers stacked. The anode 7015 is not required totransmit light, but can be formed using a light-transmitting conductivematerial as in the case of FIG. 28A. As the light-blocking film 7016, ametal or the like that reflects light can be used for example; however,it is not limited to a metal film. For example, a resin or the like towhich black pigments are added can also be used.

The light-emitting element 7012 corresponds to a region where thecathode 7013 and the anode 7015 sandwich the light-emitting layer 7014.In the case of the pixel illustrated in FIG. 28B, light is emitted fromthe light-emitting element 7012 to the cathode 7013 side as indicated byan arrow.

Next, a light-emitting element having a dual emission structure will bedescribed with reference to FIG. 28C. In FIG. 28C, a cathode 7023 of alight-emitting element 7022 is formed over a light-transmittingconductive film 7027 which is electrically connected to the driving TFT7021, and a light-emitting layer 7024 and an anode 7025 are stacked inthis order over the cathode 7023. As in the case of FIG. 28A, thecathode 7023 can be formed using a variety of conductive materials aslong as they have a low work function. The cathode 7023 is formed tohave a thickness that can transmit light. For example, a film of Alhaving a thickness of 20 nm can be used as the cathode 7023. As in FIG.28A, the light-emitting layer 7024 may be formed using either a singlelayer or a plurality of layers stacked. The anode 7025 can be formedusing a light-transmitting conductive material as in the case of FIG.28A.

The light-emitting element 7022 corresponds to a region where thecathode 7023, the light-emitting layer 7024, and the anode 7025 overlapwith one another. In the case of the pixel illustrated in FIG. 28C,light is emitted from the light-emitting element 7022 to both the anode7025 side and the cathode 7023 side as indicated by arrows.

Note that, although an organic EL element is described here as alight-emitting element, an inorganic EL element can also be provided asa light-emitting element.

In this embodiment, the example is described in which a thin filmtransistor (a driving TFT) which controls the driving of alight-emitting element is electrically connected to the light-emittingelement; however, a structure may be employed in which a current controlTFT is connected between the driving TFT and the light-emitting element.

A semiconductor device described in this embodiment is not limited tothe structures illustrated in FIGS. 28A to 28C and can be reformed invarious ways based on the spirit of techniques according to the presentinvention

Through this process, a highly reliable light-emitting display devicecan be manufactured as a semiconductor device.

This embodiment can be combined with the structure described in otherembodiments, as appropriate.

[Embodiment 10]

Next, a structure of a display panel, which is an embodiment of thesemiconductor device of the present invention, will be described below.In this embodiment, a liquid crystal display panel (also referred to asa liquid crystal panel), which is one embodiment of a liquid crystaldisplay device having a liquid crystal element as a display element, anda light-emitting display panel (also referred to as a light-emittingpanel), which is one embodiment of a semiconductor device having alight-emitting element as a display element, will be described.

The appearance and a cross section of a light-emitting display panel,which is one embodiment of the semiconductor device of the presentinvention, will be described with reference to FIGS. 29A and 29B. FIG.29A is a top view of a panel in which a light-emitting element and athin film transistor having high reliability are sealed with a sealantbetween a first substrate and a second substrate. The thin filmtransistor includes an oxygen-excess oxide semiconductor layer over agate insulating layer which is formed over the first substrate and whichis subjected to oxygen radical treatment, and oxygen-deficient oxidesemiconductor layers functioning as source and drain regions. FIG. 29Bis a cross-sectional view taken along a line H-I of FIG. 29A.

A sealant 4505 is provided so as to surround a pixel portion 4502,signal line driver circuits 4503 a and 4503 b, and scanning line drivercircuits 4504 a and 4504 b which are provided over a first substrate4501. In addition, a second substrate 4506 is provided over the pixelportion 4502, the signal line driver circuits 4503 a and 4503 b, and thescanning line driver circuits 4504 a and 4504 b. Accordingly, the pixelportion 4502, the signal line driver circuits 4503 a and 4503 b, and thescanning line driver circuits 4504 a and 4504 b are sealed together witha filler 4507, by the first substrate 4501, the sealant 4505, and thesecond substrate 4506.

The pixel portion 4502, the signal line driver circuits 4503 a and 4503b, and the scanning line driver circuits 4504 a and 4504 b formed overthe first substrate 4501 each include a plurality of thin filmtransistors, and a thin film transistor 4510 included in the pixelportion 4502 and a thin film transistor 4509 included in the signal linedriver circuit 4503 a are illustrated as examples in FIG. 29B.

The thin film transistors 4509 and 4510 correspond to thin filmtransistors having high reliability, each of which includes anoxygen-excess oxide semiconductor layer over a gate insulating layersubjected to oxygen radical treatment, and oxygen-deficient oxidesemiconductor layers functioning as source and drain regions. The thinfilm transistor described in Embodiment 1, Embodiment 2, Embodiment 3,or Embodiment 4 can be used for the thin film transistors 4509 and 4510.In this embodiment, the thin film transistors 4509 and 4510 aren-channel thin film transistors.

Moreover, reference numeral 4511 denotes a light-emitting element. Afirst electrode layer 4517 which is a pixel electrode included in thelight-emitting element 4511 is electrically connected to a sourceelectrode layer or a drain electrode layer of the thin film transistor4510. Note that a structure of the light-emitting element 4511 is notlimited to that described in this embodiment. The structure of thelight-emitting element 4511 can be changed as appropriate depending onthe direction in which light is extracted from the light-emittingelement 4511, or the like.

In addition, a variety of signals and a potential are supplied to thesignal line driver circuits 4503 a and 4503 b, the scanning line drivercircuits 4504 a and 4504 b, or the pixel portion 4502 from FPCs 4518 aand 4518 b.

In this embodiment, a connection terminal 4515 is formed with the sameconductive film as that for forming a second electrode layer 4512, and awiring 4516 is formed with the same conductive film as that for formingthe first electrode layer 4517 included in the light-emitting element4511.

The connection terminal 4515 is electrically connected to a terminalincluded in the FPC 4518 a through an anisotropic conductive film 4519.

The second substrate 4506 located in the direction in which light isextracted from the light-emitting element 4511 needs to have alight-transmitting property. In that case, a light-transmitting materialsuch as a glass plate, a plastic plate, a polyester film, or an acrylicfilm is used.

As the filler 4507, an ultraviolet curable resin or a thermosettingresin can be used, in addition to an inert gas such as nitrogen orargon. For example, PVC (polyvinyl chloride), acrylic, polyimide, anepoxy resin, a silicone resin, PVB (polyvinyl butyral), or EVA (ethylenevinyl acetate) can be used. In this embodiment, nitrogen is used for thefiller 4507.

In addition, if needed, an optical film, such as a polarizing plate, acircularly polarizing plate (including an elliptically polarizingplate), a retardation plate (a quarter-wave plate or a half-wave plate),or a color filter, may be provided as appropriate on a light-emittingsurface of the light-emitting element. Further, the polarizing plate orthe circularly polarizing plate may be provided with an anti-reflectionfilm. For example, anti-glare treatment by which reflected light can bediffused by projections and depressions on the surface so as to reducethe glare can be performed.

The signal line driver circuits 4503 a and 4503 b and the scanning linedriver circuits 4504 a and 4504 b may be mounted as driver circuitsformed using a single crystal semiconductor film or polycrystallinesemiconductor film over a substrate separately prepared. In addition,only the signal line driver circuits or part thereof, or the scanningline driver circuits or part thereof may be separately formed andmounted. This embodiment is not limited to the structure illustrated inFIGS. 29A and 29B.

Next, the appearance and a cross section of a liquid crystal displaypanel, which is one embodiment of the semiconductor device of thepresent invention, will be described with reference to FIGS. 24A to 24B.FIGS. 24A and 24B each illustrate a top view of a panel in which aliquid crystal element 4013 and thin film transistors 4010 and 4011having high reliability are sealed with a sealant 4005 between a firstsubstrate 4001 and a second substrate 4006. Each of the thin filmtransistors 4010 and 4011 includes an oxygen-excess oxide semiconductorlayer over a gate insulating layer which is formed over the firstsubstrate 4001 and which is subjected to oxygen radical treatment, andoxygen-deficient oxide semiconductor layers functioning as source anddrain regions. FIG. 24B is a cross-sectional view taken along a line M-Nof FIGS. 24A and 24B.

The sealant 4005 is provided so as to surround a pixel portion 4002 anda scanning line driver circuit 4004 which are provided over the firstsubstrate 4001. The second substrate 4006 is provided over the pixelportion 4002 and the scanning line driver circuit 4004. Therefore, thepixel portion 4002 and the scanning line driver circuit 4004 are sealedtogether with liquid crystal 4008, by the first substrate 4001, thesealant 4005, and the second substrate 4006. A signal line drivercircuit 4003 that is formed using a single crystal semiconductor film ora polycrystalline semiconductor film over a substrate separatelyprepared is mounted in a region that is different from the regionsurrounded by the sealant 4005 over the first substrate 4001.

Note that the connection method of a driver circuit which is separatelyformed is not particularly limited, and a COG method, a wire bondingmethod, a TAB method, or the like can be used. FIG. 24A illustrates anexample of mounting the signal line driver circuit 4003 by a COG method,and FIG. 24C illustrates an example of mounting the signal line drivercircuit 4003 by a TAB method.

The pixel portion 4002 and the scanning line driver circuit 4004provided over the first substrate 4001 each include a plurality of thinfilm transistors. FIG. 24B illustrates the thin film transistor 4010included in the pixel portion 4002 and the thin film transistor 4011included in the scanning line driver circuit 4004.

The thin film transistors 4010 and 4011 correspond to thin filmtransistors having high reliability, each of which includes anoxygen-excess oxide semiconductor layer over a gate insulating layersubjected to oxygen radical treatment, and oxygen-deficient oxidesemiconductor layers functioning as source and drain regions. The thinfilm transistor described in Embodiment 1, Embodiment 2, Embodiment 3,or Embodiment 4 can be used for the thin film transistors 4010 and 4011.In this embodiment, the thin film transistors 4010 and 4011 aren-channel thin film transistors.

A pixel electrode layer 4030 included in the liquid crystal element 4013is electrically connected to the thin film transistor 4010. A counterelectrode layer 4031 of the liquid crystal element 4013 is formed on thesecond substrate 4006. A portion where the pixel electrode layer 4030,the counter electrode layer 4031, and the liquid crystal layer 4008overlap with one another corresponds to the liquid crystal element 4013.Note that the pixel electrode layer 4030 and the counter electrode layer4031 are provided with an insulating layer 4032 and an insulating layer4033 respectively which each function as an alignment film, and sandwichthe liquid crystal layer 4008 with the insulating layers 4032 and 4033interposed therebetween.

Note that the first substrate 4001 and the second substrate 4006 can beformed by using glass, metal (typically, stainless steel), ceramic, orplastic. As an example of plastic, a fiberglass-reinforced plastics(FRP) plate, a polyvinyl fluoride (PVF) film, a polyester film, or anacrylic resin film can be used. In addition, a sheet with a structure inwhich an aluminum foil is sandwiched between PVF films or polyesterfilms can be used.

Reference numeral 4035 denotes a columnar spacer obtained by selectivelyetching an insulating film and is provided to control the distancebetween the pixel electrode layer 4030 and the counter electrode layer4031 (a cell gap). Further, a spherical spacer may also be used.

Further, a variety of signals and a potential are supplied to the signalline driver circuit 4003 which is formed separately, the scanning linedriver circuit 4004, or the pixel portion 4002 from an FPC 4018.

In this embodiment, a connection terminal 4015 is formed with the sameconductive film as that for the pixel electrode layer 4030 included inthe liquid crystal element 4013, and a wiring 4016 is formed with thesame conductive film as that for gate electrode layers of the thin filmtransistors 4010 and 4011.

The connection terminal 4015 is electrically connected to a terminalincluded in the FPC 4018 through an anisotropic conductive film 4019.

Note that FIGS. 20A to 20C illustrate an example in which the signalline driver circuit 4003 is formed separately and mounted on the firstsubstrate 4001; however, this embodiment is not limited to thisstructure. The scanning line driver circuit may be separately formed andthen mounted, or only part of the signal line driver circuit or part ofthe scanning line driver circuit may be separately formed and thenmounted.

FIG. 25 illustrates an example in which a liquid crystal display moduleis formed as a semiconductor device by using a TFT substrate 2600manufactured according to an embodiment of the present invention.

FIG. 25 illustrates an example of a liquid crystal display module, inwhich the TFT substrate 2600 and a counter substrate 2601 are fixed toeach other with a sealant 2602, and a pixel portion 2603 including a TFTor the like, a display element 2604 including a liquid crystal layer,and a coloring layer 2605 are provided between the substrates to form adisplay region. The coloring layer 2605 is necessary to perform colordisplay. In the case of the RGB system, coloring layers corresponding tocolors of red, green, and blue are provided for respective pixels.Polarizing plates 2606 and 2607 and a diffusion plate 2613 are providedoutside the TFT substrate 2600 and the counter substrate 2601. A lightsource includes a cold cathode tube 2610 and a reflective plate 2611,and a circuit substrate 2612 is connected to a wiring circuit portion2608 of the TFT substrate 2600 through a flexible wiring board 2609 andincludes an external circuit such as a control circuit or a power sourcecircuit. The polarizing plate and the liquid crystal layer may bestacked with a retardation plate interposed therebetween.

For the liquid crystal display module, a TN (twisted nematic) mode, anIPS (in-plane-switching) mode, an FFS (fringe field switching) mode, anMVA (multi-domain vertical alignment) mode, a PVA (patterned verticalalignment) mode, an ASM (axially symmetric aligned micro-cell) mode, anOCB (optical compensated birefringence) mode, an FLC (ferroelectricliquid crystal) mode, an AFLC (antiferroelectric liquid crystal) mode,or the like can be used.

Through this process, a highly reliable display panel can bemanufactured as a semiconductor device.

This embodiment can be combined with the structure described in otherembodiments, as appropriate.

[Embodiment 11]

A semiconductor device according to an embodiment of the presentinvention can be applied to electronic paper. Electronic paper can beused for electronic appliances of a variety of fields as long as theycan display data. For example, electronic paper can be applied to anelectronic book device (e-book reader), a poster, an advertisement in avehicle such as a train, displays of various cards such as a creditcard, and the like. Examples of the electronic appliances areillustrated in FIGS. 31A and 31B and FIG. 32.

FIG. 31A illustrates a poster 2631 formed using electronic paper. In thecase where an advertising medium is printed paper, the advertisement isreplaced by manpower; however, by using electronic paper to which thepresent invention is applied, the advertising display can be changed ina short time. Further, an image can be stably displayed without beingdistorted. Note that the poster may transmit and receive datawirelessly.

FIG. 31B illustrates an advertisement 2632 in a vehicle such as a train.In the case where an advertising medium is printed paper, theadvertisement is replaced by manpower; however, by using electronicpaper to which the present invention is applied, the advertising displaycan be changed in a short time without a lot of manpower. Further, animage can be stably displayed without being distorted. Note that theadvertisement in a vehicle may transmit and receive data wirelessly.

FIG. 32 illustrates an example of an electronic book device 2700. Forexample, the electronic book device 2700 includes two housings, ahousing 2701 and a housing 2703. The housing 2701 and the housing 2703are combined with a hinge 2711 so that the electronic book device 2700can be opened and closed with the hinge 2711 as an axis. With such astructure, the electronic book device 2700 can be operated like a paperbook.

A display portion 2705 and a display portion 2707 are incorporated inthe housing 2701 and the housing 2703, respectively. The display portion2705 and the display portion 2707 may display one image or differentimages. In the case where the display portion 2705 and the displayportion 2707 display different images, for example, a display portion onthe right side (the display portion 2705 in FIG. 32) can display textand a display portion on the left side (the display portion 2707 in FIG.32) can display graphics.

FIG. 32 illustrates an example in which the housing 2701 is providedwith an operation portion and the like. For example, the housing 2701 isprovided with a power switch 2721, an operation key 2723, a speaker2725, and the like. With the operation key 2723, pages can be turned.Note that a keyboard, a pointing device, and the like may be provided onthe surface of the housing, on which the display portion is provided.Further, an external connection terminal (an earphone terminal, a USBterminal, a terminal that can be connected to an AC adapter and variouscables such as a USB cable, or the like), a recording medium insertportion, and the like may be provided on the back surface or the sidesurface of the housing. Further, the electronic book device 2700 mayhave a function of an electronic dictionary.

The electronic book device 2700 may transmit and receive datawirelessly. A structure can be employed in which desired book data orthe like is purchased and downloaded from an electronic book serverwirelessly.

[Embodiment 12]

A semiconductor device according to an embodiment of the presentinvention can be applied to a variety of electronic appliances(including an amusement machine). Examples of the electronic appliancesare a television set (also referred to as a television or a televisionreceiver), a monitor of a computer or the like, a camera such as adigital camera or a digital video camera, a digital photo frame, amobile phone set (also referred to as a mobile phone or a mobile phonedevice), a portable game machine, a portable information terminal, anaudio reproducing device, a large-sized game machine such as a pachinkomachine, and the like.

FIG. 33A illustrates an example of a television set 9600. In thetelevision set 9600, a display portion 9603 is incorporated in a housing9601. The display portion 9603 can display an image. Further, thehousing 9601 is supported by a stand 9605 here.

The television set 9600 can be operated by an operation switch of thehousing 9601 or a separate remote controller 9610. Channels and volumecan be controlled by an operation key 9609 of the remote controller 9610so that an image displayed on the display portion 9603 can becontrolled. Further, the remote controller 9610 may be provided with adisplay portion 9607 for displaying data output from the remotecontroller 9610.

Note that the television set 9600 is provided with a receiver, a modem,and the like. With the receiver, a general television broadcast can bereceived. Further, when the television set 9600 is connected to acommunication network by wired or wireless connection via the modem,one-way (from a transmitter to a receiver) or two-way (between atransmitter and a receiver or between receivers) data communication canbe performed.

FIG. 33B illustrates an example of a digital photo frame 9700. Forexample, in the digital photo frame 9700, a display portion 9703 isincorporated in a housing 9701. The display portion 9703 can displayvarious images. For example, the display portion 9703 can display dataof an image shot by a digital camera or the like to function as a normalphoto frame.

Note that the digital photo frame 9700 is provided with an operationportion, an external connection portion (a USB terminal, a terminal thatcan be connected to various cables such as a USB cable, or the like), arecording medium insert portion, and the like. Although they may beprovided on the surface on which the display portion is provided, it ispreferable to provide them on the side surface or the back surface forthe design of the digital photo frame 9700. For example, a memorystoring data of an image shot by a digital camera is inserted in therecording medium insert portion of the digital photo frame, whereby theimage data can be transferred and displayed on the display portion 9703.

The digital photo frame 9700 may transmit and receive data wirelessly. Astructure may be employed in which desired image data is transferredwirelessly to be displayed.

FIG. 34A is a portable amusement machine including two housings, ahousing 9881 and a housing 9891. The housings 9881 and 9891 areconnected with a connection portion 9893 so as to be opened and closed.A display portion 9882 is incorporated in the housing 9881, and adisplay portion 9883 is incorporated in the housing 9891. In addition,the portable amusement machine illustrated in FIG. 34A includes aspeaker portion 9884, a recording medium insert portion 9886, an LEDlamp 9890, an input means (an operation key 9885, a connection terminal9887, a sensor 9888 (a sensor having a function of measuring force,displacement, position, speed, acceleration, angular velocity,rotational frequency, distance, light, liquid, magnetism, temperature,chemical substance, sound, time, hardness, electric field, current,voltage, electric power, radiation, flow rate, humidity, gradient,oscillation, odor, or infrared rays), or a microphone 9889), and thelike. Of course, the structure of the portable amusement machine is notlimited to the above and a structure provided with at least asemiconductor device according to the present invention may be employed.The structure can include other accessory equipment as appropriate. Theportable amusement machine illustrated in FIG. 34A has a function ofreading a program or data stored in a recording medium to display it onthe display portion, and a function of sharing information with anotherportable amusement machine by wireless communication. The portableamusement machine illustrated in FIG. 34A can have various functionswithout limitation to the above.

FIG. 34B illustrates an example of a slot machine 9900 which is anamusement machine with a big size. The slot machine 9900 includes adisplay portion 9903 incorporated in a housing 9901. In addition, theslot machine 9900 includes an operation means such as a start lever or astop switch, a coin slot, a speaker, and the like. Of course, thestructure of the slot machine 9900 is not limited to the above and astructure provided with at least a semiconductor device according to thepresent invention may be employed. The structure can include otheraccessory equipment as appropriate.

FIG. 35 illustrates an example of a mobile phone set 1000. The mobilephone set 1000 is provided with a display portion 1002 incorporated in ahousing 1001, operation buttons 1003, an external connection port 1004,a speaker 1005, a microphone 1006, and the like.

When the display portion 1002 of the mobile phone set 1000 illustratedin FIG. 35 is touched with a finger or the like, data can be input intothe mobile phone set 1000. Further, operations such as making calls andcomposing mails can be performed by touching the display portion 1002with a finger or the like.

There are mainly three screen modes of the display portion 1002. Thefirst mode is a display mode mainly for displaying an image. The secondmode is an input mode mainly for inputting data such as text. The thirdmode is a display-and-input mode in which two modes of the display modeand the input mode are combined.

For example, in the case of making a call or composing a mail, a textinput mode mainly for inputting text is selected for the display portion1002 so that text displayed on a screen can be input. In that case, itis preferable to display a keyboard or number buttons on almost all areaof the screen of the display portion 1002.

When a detection device including a sensor for detecting inclination,such as a gyroscope or an acceleration sensor, is provided inside themobile phone set 1000, display in the screen of the display portion 1002can be automatically switched by determining the direction of the mobilephone set 1000 (whether the mobile phone set 1000 stands upright or islaid down on its side).

The screen modes are switched by touching the display portion 1002 oroperating the operation buttons 1003 of the housing 1001. Alternatively,the screen modes may be switched depending on the kind of the imagedisplayed on the display portion 1002. For example, when a signal of animage displayed on the display portion is the one of moving image data,the screen mode is switched to the display mode. When the signal is theone of text data, the screen mode is switched to the input mode.

Further, in the input mode, when input by touching the display portion1002 is not performed for a certain period while a signal detected bythe optical sensor in the display portion 1002 is detected, the screenmode may be controlled so as to be switched from the input mode to thedisplay mode.

The display portion 1002 may function as an image sensor. For example,an image of the palm print, the fingerprint, or the like is taken bytouching the display portion 1002 with the palm or the finger, wherebypersonal authentication can be performed. Further, by providing abacklight or sensing light source emitting a near-infrared light for thedisplay portion, an image of a finger vein, a palm vein, or the like canbe taken.

[Embodiment 13]

In this embodiment, an example of a channel protective thin filmtransistor of the present invention will be described. Accordingly,except the channel protective structure, the thin film transistor can beformed in a manner similar to Embodiment 1 or 2, and repetitivedescription of the same portions as or portions having functions similarto those in Embodiment 1 or 2 and manufacturing steps will be omitted.

In this embodiment, a thin film transistor 175 included in asemiconductor device will be described with reference to FIG. 36.

As illustrated in FIG. 36, the thin film transistor 175 including a gateelectrode layer 101, a gate insulating layer 102, a semiconductor layer103, a channel protective layer 108, source and drain regions 104 a and104 b, and source and drain electrode layers 105 a and 105 b is providedover a substrate 100.

In the thin film transistor 175 of this embodiment, the channelprotective layer 108 is provided over a channel formation region of thesemiconductor layer 103. The semiconductor layer 103 is not etchedbecause the channel protective layer 108 functions as a channel stopper.The channel protective layer 108 may also be formed by successiveformation after the gate insulating layer 102 and the semiconductorlayer 103 without being exposed to the air. By successive formation of astack of thin films without exposure to air, productivity can beimproved.

The channel protective layer 108 can be formed using an inorganicmaterial (such as silicon oxide, silicon nitride, silicon oxynitride,silicon nitride oxide, aluminum oxide, aluminum nitride, aluminumoxynitride, or aluminum nitride oxide). As a formation method, asputtering method can be used.

The semiconductor layer 103 is an oxygen-excess oxide semiconductorlayer containing In, Ga, and Zn, and the source and drain regions 104 aand 104 b are oxygen-deficient oxide semiconductor layers containing In,Ga, and Zn.

The gate insulating layer having an oxygen-excess region and thesemiconductor layers which are oxygen-excess oxide semiconductor layersare compatible with each other and can provide favorable interfacecharacteristics.

After the gate insulating layer 102 is formed, a surface of the gateinsulating layer 102 is subjected to oxygen radical treatment to form anoxygen-excess region. The gate insulating layer 102 and thesemiconductor layer 103 are formed successively.

The source and drain regions 104 a and 104 b which are oxygen-deficientoxide semiconductor layers include crystal grains with a size of 1 nm to10 nm and have a higher carrier concentration than the semiconductorlayer 103.

The thin film transistor described in this embodiment has a structure inwhich the gate electrode layer, the gate insulating layer, thesemiconductor layer (an oxygen-excess oxide semiconductor layer), thesource and drain regions (oxygen-deficient oxide semiconductor layers),and the source and drain electrode layers are stacked. By usingoxygen-deficient oxide semiconductor layers including crystal grains andhaving a high carrier concentration as the source and drain regions, theparasitic capacitance can be reduced while the thickness of thesemiconductor layer is kept small. Note that the parasitic capacitanceis sufficiently suppressed even when the source and drain regions have asmall thickness, because the thickness of the source and drain regionsis sufficient with respect to that of the gate insulating layer.

According to this embodiment, a thin film transistor with smallphotoelectric current, small parasitic capacitance, and high on-offratio can be obtained, so that a thin film transistor having excellentdynamic characteristics can be manufactured. Therefore, a semiconductordevice which includes thin film transistors having excellent electricalcharacteristics and high reliability can be provided.

This embodiment can be combined with any of the other embodiments asappropriate.

This application is based on Japanese Patent Application serial no.2008-224034 filed with Japan Patent Office on Sep. 1, 2008, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: a gateelectrode layer; a gate insulating layer over the gate electrode layer;an oxide semiconductor layer over the gate electrode layer with the gateinsulating layer therebetween, the oxide semiconductor layer comprisingindium and zinc; a source region over the oxide semiconductor layer; adrain region over the oxide semiconductor layer, wherein each of thesource region and the drain region comprises indium and zinc; a sourceelectrode layer on the source region; and a drain electrode layer on thedrain region, wherein each of the source region and the drain regioncomprises crystal grains having a diameter of 1 nm to 10 nm, wherein theoxide semiconductor layer extends beyond outer side edges of the sourceregion and the drain region, wherein the source region extends beyond anouter side edge of the source electrode layer, and wherein the drainregion extends beyond an outer side edge of the drain electrode layer.2. The semiconductor device according to claim 1, wherein an oxygenconcentration in the oxide semiconductor layer at an interface with thegate insulating layer is higher than at a portion distant from theinterface.
 3. The semiconductor device according to claim 1, wherein theoxide semiconductor layer further comprises gallium.
 4. Thesemiconductor device according to claim 1, wherein each of the sourceelectrode layer and the drain electrode layer comprises a metal selectedfrom the group consisting of aluminum, copper, titanium and molybdenum.5. The semiconductor device according to claim 1, wherein an oxygenconcentration in the source region and the drain region is lower than anoxygen concentration in the oxide semiconductor layer.
 6. Asemiconductor device comprising: a gate electrode layer; a gateinsulating layer over the gate electrode layer; an oxide semiconductorlayer over the gate electrode layer with the gate insulating layertherebetween, the oxide semiconductor layer comprising indium, galliumand zinc; a source region over the oxide semiconductor layer; a drainregion over the oxide semiconductor layer, wherein each of the sourceregion and the drain region comprises indium and zinc; a sourceelectrode layer on the source region; and a drain electrode layer on thedrain region, wherein each of the source electrode layer and the drainelectrode layer comprises copper, wherein the oxide semiconductor layerextends beyond outer side edges of the source region and the drainregion, wherein the source region extends beyond an outer side edge ofthe source electrode layer, and wherein the drain region extends beyondan outer side edge of the drain electrode layer.
 7. The semiconductordevice according to claim 6, wherein each of the source region and thedrain region comprises crystal grains having a diameter of 1 nm to 10nm.
 8. The semiconductor device according to claim 6, wherein an oxygenconcentration in the oxide semiconductor layer at an interface with thegate insulating layer is higher than at a portion distant from theinterface.
 9. The semiconductor device according to claim 6, whereineach of the source region and the drain region further comprisesgallium.
 10. The semiconductor device according to claim 6, wherein thegate electrode layer comprises a metal selected from the groupconsisting of titanium, molybdenum, chromium, tantalum, tungsten,aluminum and an alloy thereof.
 11. The semiconductor device according toclaim 6, wherein an oxygen concentration in the source region and thedrain region is lower than an oxygen concentration in the oxidesemiconductor layer.
 12. A semiconductor device comprising: a gateelectrode layer; a gate insulating layer over the gate electrode layer;an oxide semiconductor layer over the gate electrode layer with the gateinsulating layer therebetween, the oxide semiconductor layer comprisingindium, gallium and zinc; a first oxide layer over the oxidesemiconductor layer; a second oxide layer over the oxide semiconductorlayer, wherein each of the first oxide layer and the second oxide layercomprises indium and zinc; a first conductive layer on the first oxidelayer; a second conductive layer on the second oxide layer; and aninsulating film over the first conductive layer and the secondconductive layer, wherein the insulating film is in contact with anupper surface of the oxide semiconductor layer between the firstconductive layer and the second conductive layer, wherein each of thefirst conductive layer and the second conductive layer comprises copper,wherein the oxide semiconductor layer extends beyond outer side edges ofthe first oxide layer and the second oxide layer, wherein the firstconductive layer does not extend beyond the outer side edge of the firstoxide layer, and wherein the second conductive layer does not extendbeyond the outer side edge of the second oxide layer.
 13. Thesemiconductor device according to claim 12, wherein each of the firstoxide layer and the second oxide layer comprises crystal grains having adiameter of 1 nm to 10 nm.
 14. The semiconductor device according toclaim 12, wherein an oxygen concentration in the oxide semiconductorlayer at an interface with the gate insulating layer is higher than at aportion distant from the interface.
 15. The semiconductor deviceaccording to claim 12, wherein each of the first oxide layer and thesecond oxide layer further comprises gallium.
 16. The semiconductordevice according to claim 12, wherein the gate electrode layer comprisesa metal selected from the group consisting of titanium, molybdenum,chromium, tantalum, tungsten, aluminum and an alloy thereof.
 17. Thesemiconductor device according to claim 12, wherein an oxygenconcentration in the first oxide layer and the second oxide layer islower than an oxygen concentration in the oxide semiconductor layer.